Isovalent doping and the CiOi defect in germanium

S. R.G. Christopoulos, E. N. Sgourou, R. V. Vovk, A. Chroneos, C. A. Londos

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Oxygen–carbon defects have been studied for decades in silicon but are less well established in germanium. In the present study we employ density functional theory calculations to study the structure of the CiOi defect in germanium. Additionally, we investigate the interaction the CiOi defect with isovalent dopants such as silicon and tin. It is calculated that the CiOi defects will preferentially form near isovalent dopants in germanium. Interestingly the structure of the dopant-CiOi defects is different with the Sn residing next to the Oi whereas the Si atom bonds with the Ci. The differences in the structure of CiOi defects in the vicinity of isovalent dopants are discussed.

Original languageEnglish
Pages (from-to)4261-4265
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Issue number5
Early online date6 Dec 2017
Publication statusPublished - 1 Mar 2018
Externally publishedYes


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