Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?

P. C. Zalm; J. A. Van Den Berg; J. G.M. Van Berkum; P. Bailey; T. C.Q. Noakes

doi:10.1063/1.126201

Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?

P. C. Zalm, J. A. Van Den Berg, J. G.M. Van Berkum, P. Bailey, T. C.Q. Noakes

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In recent publications, it has been suggested that atomically clean, flat, crystalline silicon surfaces can be obtained by low-energy (0.1-1 keV) oblique-angle (≥45° off-normal) argon-ion bombardment at mildly elevated target temperatures (∼500°C). Here, this procedure has been applied to a multiple boron delta-doped Si structure. It leads to a massive relocation of subsurface doping atoms because of the accompanying injection of point defects into the bulk. This greatly affects the usefulness of the proposed cleaning method and shows that it is hazardous to base claims of quality solely on results obtained with surface-sensitive (∼1 nm) analytical techniques.

Original language	English
Pages (from-to)	1887-1889
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	14
Early online date	27 Mar 2000
DOIs	https://doi.org/10.1063/1.126201
Publication status	Published - 3 Apr 2000
Externally published	Yes

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@article{64f6c3be690149a0a95f0143fda460ab,

title = "Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?",

abstract = "In recent publications, it has been suggested that atomically clean, flat, crystalline silicon surfaces can be obtained by low-energy (0.1-1 keV) oblique-angle (≥45° off-normal) argon-ion bombardment at mildly elevated target temperatures (∼500°C). Here, this procedure has been applied to a multiple boron delta-doped Si structure. It leads to a massive relocation of subsurface doping atoms because of the accompanying injection of point defects into the bulk. This greatly affects the usefulness of the proposed cleaning method and shows that it is hazardous to base claims of quality solely on results obtained with surface-sensitive (∼1 nm) analytical techniques.",

author = "Zalm, {P. C.} and {Van Den Berg}, {J. A.} and {Van Berkum}, {J. G.M.} and P. Bailey and Noakes, {T. C.Q.}",

year = "2000",

month = apr,

day = "3",

doi = "10.1063/1.126201",

language = "English",

volume = "76",

pages = "1887--1889",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Low-energy grazing-angle argon-ion irradiation of silicon

T2 - A viable option for cleaning?

AU - Zalm, P. C.

AU - Van Den Berg, J. A.

AU - Van Berkum, J. G.M.

AU - Bailey, P.

AU - Noakes, T. C.Q.

PY - 2000/4/3

Y1 - 2000/4/3

N2 - In recent publications, it has been suggested that atomically clean, flat, crystalline silicon surfaces can be obtained by low-energy (0.1-1 keV) oblique-angle (≥45° off-normal) argon-ion bombardment at mildly elevated target temperatures (∼500°C). Here, this procedure has been applied to a multiple boron delta-doped Si structure. It leads to a massive relocation of subsurface doping atoms because of the accompanying injection of point defects into the bulk. This greatly affects the usefulness of the proposed cleaning method and shows that it is hazardous to base claims of quality solely on results obtained with surface-sensitive (∼1 nm) analytical techniques.

AB - In recent publications, it has been suggested that atomically clean, flat, crystalline silicon surfaces can be obtained by low-energy (0.1-1 keV) oblique-angle (≥45° off-normal) argon-ion bombardment at mildly elevated target temperatures (∼500°C). Here, this procedure has been applied to a multiple boron delta-doped Si structure. It leads to a massive relocation of subsurface doping atoms because of the accompanying injection of point defects into the bulk. This greatly affects the usefulness of the proposed cleaning method and shows that it is hazardous to base claims of quality solely on results obtained with surface-sensitive (∼1 nm) analytical techniques.

UR - http://www.scopus.com/inward/record.url?scp=0142137403&partnerID=8YFLogxK

U2 - 10.1063/1.126201

DO - 10.1063/1.126201

M3 - Article

AN - SCOPUS:0142137403

VL - 76

SP - 1887

EP - 1889

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -

Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?

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