Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?

P. C. Zalm, J. A. Van Den Berg, J. G.M. Van Berkum, P. Bailey, T. C.Q. Noakes

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


In recent publications, it has been suggested that atomically clean, flat, crystalline silicon surfaces can be obtained by low-energy (0.1-1 keV) oblique-angle (≥45° off-normal) argon-ion bombardment at mildly elevated target temperatures (∼500°C). Here, this procedure has been applied to a multiple boron delta-doped Si structure. It leads to a massive relocation of subsurface doping atoms because of the accompanying injection of point defects into the bulk. This greatly affects the usefulness of the proposed cleaning method and shows that it is hazardous to base claims of quality solely on results obtained with surface-sensitive (∼1 nm) analytical techniques.

Original languageEnglish
Pages (from-to)1887-1889
Number of pages3
JournalApplied Physics Letters
Issue number14
Early online date27 Mar 2000
Publication statusPublished - 3 Apr 2000
Externally publishedYes


Dive into the research topics of 'Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?'. Together they form a unique fingerprint.

Cite this