Low-temperature investigations of ion-induced amorphisation in silicon carbide nanowhiskers under helium irradiation

Research output: Contribution to journalArticle

Abstract

The abundant free surface in nanoporous materials may play a major role in providing ideal sinks for the removal of radiation-induced defects. To study the response of these materials to radiation damage, 4H-silicon carbide (SiC) nanowhiskers (NWs) have been used to model individual ligaments of nanoporous SiC. Using in-situ transmission electron microscopy (TEM) with helium ion irradiation, a crystalline-to-amorphous transformation of the nanowhiskers was investigated as a function of irradiation dose and temperature. For a comparative analysis, the NWs were irradiated simultaneously alongside SiC thin foils (model systems for bulk-like SiC) using 6 keV He ions at temperatures between 100 and 400 K and doses up to 50 dpa. Relatively-low swelling (~8%) due to amorphisation was detected in the NWs compared to the foils (~14%) irradiated at room temperature. A relatively-high critical dose for amorphisation (5 dpa) was observed in the NWs for irradiations below room temperature compared to the foils (0.7 dpa). Amorphisation was completely avoided for NWs irradiated above 200 K – lower than the critical temperature in the foils which was ~300 K. The reduced swelling, higher critical-dose and lower critical-temperature for amorphisation exhibited by the NWs indicate an enhancement in radiation resistance over the foils.
Original languageEnglish
Article number143969
JournalApplied Surface Science
Volume501
Early online date12 Sep 2019
DOIs
Publication statusE-pub ahead of print - 12 Sep 2019

Fingerprint

Nanowhiskers
Helium
Amorphization
Silicon carbide
silicon carbides
foils
helium
Irradiation
Ions
Metal foil
irradiation
dosage
ions
swelling
critical temperature
Temperature
ligaments
Swelling
helium ions
room temperature

Cite this

@article{2100f6f6dfaa4070a3ebbe6c707db958,
title = "Low-temperature investigations of ion-induced amorphisation in silicon carbide nanowhiskers under helium irradiation",
abstract = "The abundant free surface in nanoporous materials may play a major role in providing ideal sinks for the removal of radiation-induced defects. To study the response of these materials to radiation damage, 4H-silicon carbide (SiC) nanowhiskers (NWs) have been used to model individual ligaments of nanoporous SiC. Using in-situ transmission electron microscopy (TEM) with helium ion irradiation, a crystalline-to-amorphous transformation of the nanowhiskers was investigated as a function of irradiation dose and temperature. For a comparative analysis, the NWs were irradiated simultaneously alongside SiC thin foils (model systems for bulk-like SiC) using 6 keV He ions at temperatures between 100 and 400 K and doses up to 50 dpa. Relatively-low swelling (~8{\%}) due to amorphisation was detected in the NWs compared to the foils (~14{\%}) irradiated at room temperature. A relatively-high critical dose for amorphisation (5 dpa) was observed in the NWs for irradiations below room temperature compared to the foils (0.7 dpa). Amorphisation was completely avoided for NWs irradiated above 200 K – lower than the critical temperature in the foils which was ~300 K. The reduced swelling, higher critical-dose and lower critical-temperature for amorphisation exhibited by the NWs indicate an enhancement in radiation resistance over the foils.",
keywords = "Nanoporous, Silicon carbide, Nanowhiskers, Amorphisation, In-situ TEM, Radiation tolerance",
author = "Emily Aradi and Jacob Lewis-Fell and Graeme Greaves and Stephen Donnelly and Jonathan Hinks",
year = "2019",
month = "9",
day = "12",
doi = "10.1016/j.apsusc.2019.143969",
language = "English",
volume = "501",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Low-temperature investigations of ion-induced amorphisation in silicon carbide nanowhiskers under helium irradiation

AU - Aradi, Emily

AU - Lewis-Fell, Jacob

AU - Greaves, Graeme

AU - Donnelly, Stephen

AU - Hinks, Jonathan

PY - 2019/9/12

Y1 - 2019/9/12

N2 - The abundant free surface in nanoporous materials may play a major role in providing ideal sinks for the removal of radiation-induced defects. To study the response of these materials to radiation damage, 4H-silicon carbide (SiC) nanowhiskers (NWs) have been used to model individual ligaments of nanoporous SiC. Using in-situ transmission electron microscopy (TEM) with helium ion irradiation, a crystalline-to-amorphous transformation of the nanowhiskers was investigated as a function of irradiation dose and temperature. For a comparative analysis, the NWs were irradiated simultaneously alongside SiC thin foils (model systems for bulk-like SiC) using 6 keV He ions at temperatures between 100 and 400 K and doses up to 50 dpa. Relatively-low swelling (~8%) due to amorphisation was detected in the NWs compared to the foils (~14%) irradiated at room temperature. A relatively-high critical dose for amorphisation (5 dpa) was observed in the NWs for irradiations below room temperature compared to the foils (0.7 dpa). Amorphisation was completely avoided for NWs irradiated above 200 K – lower than the critical temperature in the foils which was ~300 K. The reduced swelling, higher critical-dose and lower critical-temperature for amorphisation exhibited by the NWs indicate an enhancement in radiation resistance over the foils.

AB - The abundant free surface in nanoporous materials may play a major role in providing ideal sinks for the removal of radiation-induced defects. To study the response of these materials to radiation damage, 4H-silicon carbide (SiC) nanowhiskers (NWs) have been used to model individual ligaments of nanoporous SiC. Using in-situ transmission electron microscopy (TEM) with helium ion irradiation, a crystalline-to-amorphous transformation of the nanowhiskers was investigated as a function of irradiation dose and temperature. For a comparative analysis, the NWs were irradiated simultaneously alongside SiC thin foils (model systems for bulk-like SiC) using 6 keV He ions at temperatures between 100 and 400 K and doses up to 50 dpa. Relatively-low swelling (~8%) due to amorphisation was detected in the NWs compared to the foils (~14%) irradiated at room temperature. A relatively-high critical dose for amorphisation (5 dpa) was observed in the NWs for irradiations below room temperature compared to the foils (0.7 dpa). Amorphisation was completely avoided for NWs irradiated above 200 K – lower than the critical temperature in the foils which was ~300 K. The reduced swelling, higher critical-dose and lower critical-temperature for amorphisation exhibited by the NWs indicate an enhancement in radiation resistance over the foils.

KW - Nanoporous

KW - Silicon carbide

KW - Nanowhiskers

KW - Amorphisation

KW - In-situ TEM

KW - Radiation tolerance

UR - http://www.scopus.com/inward/record.url?scp=85073153969&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2019.143969

DO - 10.1016/j.apsusc.2019.143969

M3 - Article

VL - 501

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 143969

ER -