Magnetic field induced transitions in diluted magnetic semiconductor quantum wells

The purpose of this paper is to present a detailed theoretical study of the behaviour of excitonic transitions which are forbidden in a zero magnetic field but whose oscillator strength increases with the applied field. The calculation utilizes a two parameter excitonic wave function which permits the relative motion term to assume the symmetry of either a prolate or an oblate spheroid should it be energetically favourable to do so. In addition the effect of the coulombic interaction of the electron and hole is treated in a self-consistent manner and the calculation includes enhanced paramagnetic effects at the interface. A detailed study is given of experimental observations [Ribayrol et al., Phys. Rev. B 51 (1995) 7882] in which the behaviour of the e1-hh3 transition is explained in terms of a magnetic field induced type-I-type-II transition in a diluted magnetic semiconductor quantum well system.