Magnitude and sign of the carrier-magnetic-ion exchange-interaction term in the monolayer regions next to the interface between a magnetic and nonmagnetic semiconductor

The magnitude and/or the sign of the carrier-magnetic-ion exchange interaction J could be different from that of bulk material in the monolayer regions next to an interface between a magnetic and a nonmagnetic semiconductor. A theoretical investigation of the influence this would have on the Zeeman splittings of both light and heavy holes is evaluated as a function of the well width. Comparison with experimental results for a range of quantum wells of varying width, and differing concentrations of the magnetic ion in the barrier, enables interesting conclusions to be drawn with respect to the variation in this parameter. In particular, the experimental data are shown to be consistent with a variation in J for the electron that is markedly different from that for the hole.