Abstract
Electron-LO phonon and electron-electron transition rates are calculated for a three-level triple quantum well system to be employed as a laser operating in the far-infrared (30-300 μm) or terahertz (1-10 THz) region. The population ratio is determined from the ratio of the carrier lifetimes in levels |3〉 and |2〉. The most effective way of depopulating the lower laser level is found to be by LO phonon scattering to a strongly coupled state, as occurs at an anticrossing. Back scattering of carriers from level |1〉 to level |2〉 is significant at room temperature, but a population ratio of approximately 5 is possible nonetheless.
Original language | English |
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Pages (from-to) | 373-376 |
Number of pages | 4 |
Journal | Superlattices and Microstructures |
Volume | 25 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1 Jan 1999 |
Externally published | Yes |