MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection

Chemistry

• Shallow Donor 100%
• Subband 85%
• Hall Effect 85%
• Potential Well 85%
• Molecular Beam Epitaxy 85%
• Metal Insulator Transition 85%
• Silicon Atom 70%
• Cryogenics 65%
• Transport Property 56%
• Compound Mobility 45%
• Gas 31%

Physics & Astronomy

• molecular beam epitaxy 50%
• transport properties 47%
• quantum wells 45%
• impurities 39%
• mesas 34%
• cryogenic temperature 32%
• silicon 32%
• electronics 30%
• spectral sensitivity 30%
• Hall effect 27%
• photometers 26%
• frequency ranges 22%
• insulators 21%
• conduction 19%
• characterization 16%
• radiation 16%
• scattering 15%
• gases 15%
• metals 15%
• atoms 15%
• temperature 8%

Engineering & Materials Science

• Semiconductor quantum wells 92%
• Molecular beam epitaxy 92%
• Transport properties 75%
• Silicon 46%
• Impurities 38%
• Metal insulator transition 37%
• Hall effect 27%
• Photodetectors 25%
• Temperature 23%
• Cryogenics 20%
• Atoms 20%
• Scattering 18%
• Radiation 15%
• Gases 11%