Electron transport in GaN/AlGaN and GaAs/AlGaAs terahertz quantum cascade lasers is calculated using a fully self-consistent intersubband scattering model with thermal balancing. Subband populations and carrier transition rates are calculated and all relevant intra- and inter-period electron-electron and electron-LO-phonon scattering mechanisms are included. In particular, the influence of the lattice temperature on relevant scattering rates, carrier lifetimes and the population inversion is investigated in both cases.
|Number of pages||3|
|Journal||Semiconductor Science and Technology|
|Early online date||1 Mar 2004|
|Publication status||Published - 1 Apr 2004|
|Event||International Conference on Nonequilibrium Carrier Dynamics in Semiconductors: Nonequilibrium Carrier Transport in Low-Dimensional and Nanostructured Systems - Modena, Italy|
Duration: 28 Jul 2003 → 1 Aug 2003