Mechanisms of carrier transport and temperature performance evaluation in terahertz quantum cascade lasers

D. Indjin; Z. Ikonić; V. D. Jovanović; P. Harrison; R. W. Kelsall

doi:10.1088/0268-1242/19/4/038

Mechanisms of carrier transport and temperature performance evaluation in terahertz quantum cascade lasers

D. Indjin, Z. Ikonić, V. D. Jovanović, P. Harrison, R. W. Kelsall

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

Electron transport in GaN/AlGaN and GaAs/AlGaAs terahertz quantum cascade lasers is calculated using a fully self-consistent intersubband scattering model with thermal balancing. Subband populations and carrier transition rates are calculated and all relevant intra- and inter-period electron-electron and electron-LO-phonon scattering mechanisms are included. In particular, the influence of the lattice temperature on relevant scattering rates, carrier lifetimes and the population inversion is investigated in both cases.

Original language	English
Pages (from-to)	S104-S106
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	19
Issue number	S4
Early online date	1 Mar 2004
DOIs	https://doi.org/10.1088/0268-1242/19/4/038
Publication status	Published - 1 Apr 2004
Externally published	Yes
Event	International Conference on Nonequilibrium Carrier Dynamics in Semiconductors: Nonequilibrium Carrier Transport in Low-Dimensional and Nanostructured Systems - Modena, Italy Duration: 28 Jul 2003 → 1 Aug 2003

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title = "Mechanisms of carrier transport and temperature performance evaluation in terahertz quantum cascade lasers",

abstract = "Electron transport in GaN/AlGaN and GaAs/AlGaAs terahertz quantum cascade lasers is calculated using a fully self-consistent intersubband scattering model with thermal balancing. Subband populations and carrier transition rates are calculated and all relevant intra- and inter-period electron-electron and electron-LO-phonon scattering mechanisms are included. In particular, the influence of the lattice temperature on relevant scattering rates, carrier lifetimes and the population inversion is investigated in both cases.",

keywords = "Carrier concentration, Electron energy levels, Electron scattering, Electron transport properties, Phonons, Semiconducting gallium compounds, Semiconductor lasers",

author = "D. Indjin and Z. Ikoni{\'c} and Jovanovi{\'c}, \{V. D.\} and P. Harrison and Kelsall, \{R. W.\}",

year = "2004",

month = apr,

day = "1",

doi = "10.1088/0268-1242/19/4/038",

language = "English",

volume = "19",

pages = "S104--S106",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "S4",

note = "International Conference on Nonequilibrium Carrier Dynamics in Semiconductors : Nonequilibrium Carrier Transport in Low-Dimensional and Nanostructured Systems ; Conference date: 28-07-2003 Through 01-08-2003",

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TY - JOUR

T1 - Mechanisms of carrier transport and temperature performance evaluation in terahertz quantum cascade lasers

AU - Indjin, D.

AU - Ikonić, Z.

AU - Jovanović, V. D.

AU - Harrison, P.

AU - Kelsall, R. W.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Electron transport in GaN/AlGaN and GaAs/AlGaAs terahertz quantum cascade lasers is calculated using a fully self-consistent intersubband scattering model with thermal balancing. Subband populations and carrier transition rates are calculated and all relevant intra- and inter-period electron-electron and electron-LO-phonon scattering mechanisms are included. In particular, the influence of the lattice temperature on relevant scattering rates, carrier lifetimes and the population inversion is investigated in both cases.

AB - Electron transport in GaN/AlGaN and GaAs/AlGaAs terahertz quantum cascade lasers is calculated using a fully self-consistent intersubband scattering model with thermal balancing. Subband populations and carrier transition rates are calculated and all relevant intra- and inter-period electron-electron and electron-LO-phonon scattering mechanisms are included. In particular, the influence of the lattice temperature on relevant scattering rates, carrier lifetimes and the population inversion is investigated in both cases.

KW - Carrier concentration

KW - Electron energy levels

KW - Electron scattering

KW - Electron transport properties

KW - Phonons

KW - Semiconducting gallium compounds

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/1942516918

U2 - 10.1088/0268-1242/19/4/038

DO - 10.1088/0268-1242/19/4/038

M3 - Conference article

AN - SCOPUS:1942516918

SN - 0268-1242

VL - 19

SP - S104-S106

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - S4

T2 - International Conference on Nonequilibrium Carrier Dynamics in Semiconductors

Y2 - 28 July 2003 through 1 August 2003

ER -

Mechanisms of carrier transport and temperature performance evaluation in terahertz quantum cascade lasers

Abstract

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