Mechanisms of dynamic range limitations in GaAsAlGaAs quantum-cascade lasers: Influence of injector doping

V. D. Jovanović; D. Indjin; N. Vukmirović; Z. Ikonić; P. Harrison; E. H. Linfield; H. Page; X. Marcadet; C. Sirtori; C. Worrall; H. E. Beere; D. A. Ritchie

doi:10.1063/1.1937993

Mechanisms of dynamic range limitations in GaAsAlGaAs quantum-cascade lasers: Influence of injector doping

V. D. Jovanović, D. Indjin, N. Vukmirović, Z. Ikonić, P. Harrison, E. H. Linfield, H. Page, X. Marcadet, C. Sirtori, C. Worrall, H. E. Beere, D. A. Ritchie

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

The influence of doping density on the performance of GaAsAlGaAs quantum-cascade lasers is presented. A fully self-consistent Schrödinger-Poisson analysis, based on a scattering rate equation approach, was employed to simulate the above threshold electron transport in laser devices. V-shaped local field domain formation was observed, preventing resonant subband level alignment in the high pumping-current regime. The resulting saturation of the maximal current, together with an increase of the threshold current, limits the dynamic working range under higher doping. Experimental measurements are in good agreement with the theoretical predictions.

Original language	English
Article number	211117
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	21
Early online date	18 May 2005
DOIs	https://doi.org/10.1063/1.1937993
Publication status	Published - 23 May 2005
Externally published	Yes

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title = "Mechanisms of dynamic range limitations in GaAsAlGaAs quantum-cascade lasers: Influence of injector doping",

abstract = "The influence of doping density on the performance of GaAsAlGaAs quantum-cascade lasers is presented. A fully self-consistent Schr{\"o}dinger-Poisson analysis, based on a scattering rate equation approach, was employed to simulate the above threshold electron transport in laser devices. V-shaped local field domain formation was observed, preventing resonant subband level alignment in the high pumping-current regime. The resulting saturation of the maximal current, together with an increase of the threshold current, limits the dynamic working range under higher doping. Experimental measurements are in good agreement with the theoretical predictions.",

keywords = "Carrier concentration, Electron transport properties, Quantum optics, Scattering, Semiconductor doping, Semiconductor quantum wells",

author = "Jovanovi{\'c}, {V. D.} and D. Indjin and N. Vukmirovi{\'c} and Z. Ikoni{\'c} and P. Harrison and Linfield, {E. H.} and H. Page and X. Marcadet and C. Sirtori and C. Worrall and Beere, {H. E.} and Ritchie, {D. A.}",

year = "2005",

month = may,

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doi = "10.1063/1.1937993",

language = "English",

volume = "86",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Mechanisms of dynamic range limitations in GaAsAlGaAs quantum-cascade lasers

T2 - Influence of injector doping

AU - Jovanović, V. D.

AU - Indjin, D.

AU - Vukmirović, N.

AU - Ikonić, Z.

AU - Harrison, P.

AU - Linfield, E. H.

AU - Page, H.

AU - Marcadet, X.

AU - Sirtori, C.

AU - Worrall, C.

AU - Beere, H. E.

AU - Ritchie, D. A.

PY - 2005/5/23

Y1 - 2005/5/23

N2 - The influence of doping density on the performance of GaAsAlGaAs quantum-cascade lasers is presented. A fully self-consistent Schrödinger-Poisson analysis, based on a scattering rate equation approach, was employed to simulate the above threshold electron transport in laser devices. V-shaped local field domain formation was observed, preventing resonant subband level alignment in the high pumping-current regime. The resulting saturation of the maximal current, together with an increase of the threshold current, limits the dynamic working range under higher doping. Experimental measurements are in good agreement with the theoretical predictions.

AB - The influence of doping density on the performance of GaAsAlGaAs quantum-cascade lasers is presented. A fully self-consistent Schrödinger-Poisson analysis, based on a scattering rate equation approach, was employed to simulate the above threshold electron transport in laser devices. V-shaped local field domain formation was observed, preventing resonant subband level alignment in the high pumping-current regime. The resulting saturation of the maximal current, together with an increase of the threshold current, limits the dynamic working range under higher doping. Experimental measurements are in good agreement with the theoretical predictions.

KW - Carrier concentration

KW - Electron transport properties

KW - Quantum optics

KW - Scattering

KW - Semiconductor doping

KW - Semiconductor quantum wells

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U2 - 10.1063/1.1937993

DO - 10.1063/1.1937993

M3 - Article

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VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 211117

ER -

Mechanisms of dynamic range limitations in GaAsAlGaAs quantum-cascade lasers: Influence of injector doping

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