Mechanisms of dynamic range limitations in GaAsAlGaAs quantum-cascade lasers: Influence of injector doping

V. D. Jovanović, D. Indjin, N. Vukmirović, Z. Ikonić, P. Harrison, E. H. Linfield, H. Page, X. Marcadet, C. Sirtori, C. Worrall, H. E. Beere, D. A. Ritchie

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)

Abstract

The influence of doping density on the performance of GaAsAlGaAs quantum-cascade lasers is presented. A fully self-consistent Schrödinger-Poisson analysis, based on a scattering rate equation approach, was employed to simulate the above threshold electron transport in laser devices. V-shaped local field domain formation was observed, preventing resonant subband level alignment in the high pumping-current regime. The resulting saturation of the maximal current, together with an increase of the threshold current, limits the dynamic working range under higher doping. Experimental measurements are in good agreement with the theoretical predictions.

Original languageEnglish
Article number211117
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number21
Early online date18 May 2005
DOIs
Publication statusPublished - 23 May 2005
Externally publishedYes

Fingerprint

Dive into the research topics of 'Mechanisms of dynamic range limitations in GaAsAlGaAs quantum-cascade lasers: Influence of injector doping'. Together they form a unique fingerprint.

Cite this