Medium Energy Ion Scattering (MEIS) has been used to determine the pre- and post- annealing damage distributions following 0.5-2.5 keV B+ implantation into Si (100) at different substrate temperatures. Substrates were implanted to doses of up to 3 × 1015 cm-2at temperatures of -120 °C, 25 °C and 300 °C and annealed in a rapid thermal processing (RTP) system to temperatures between 400 °C and 1000 °C for 10 s. For the room temperature (RT) implants, two distinct damage distributions were observed. The first, was a near-surface damage peak which merges with the virgin Si surface peak, and has a width ≤ 3 nm. For B + doses above 1015 cm-2, a second, deeper damage peak appeared at a depth of ≈ 7 nm, well below the TRIM predicted B+ mean projected range of R, = 5.3 nm. This peak is probably due to the formation of small interstitial (Ix) and /or By-I x clusters. During implantation at 300 °C, more effective dynamic annealing results in a substantially reduced width of the near-surface damage peak. The deeper damage peak is similar to that observed for RT implantation. B+ implantation at -120 °C leads to a single damage peak stretching from the surface to the position of the deeper damage peak. The MEIS yield approaches random level, showing near or total amorphisation of the Si lattice, yet solid phase epitaxial regrowth is arrested at Rp. RTP at 900 °C of this implant leads to the highest degree of damage recovery, suggesting that low temperature implantation restricts the agglomeration of defects. RTP of the RT implanted samples at 400∼500 °C leads to substantial reduction in the two damage peaks, especially in the width of the near-surface peak. For RTP at 900 °C and 1000 °C, the near-surface damage region broadens as the deeper damage almost disappears, suggesting that, as the complex defects in the deeper damage region dissolve, point defects not only move into the bulk causing TED, but also towards surface, as a result of which the surface peak width increases.
|Title of host publication
|2000 International Conference on Ion Implantation Technology
|Subtitle of host publication
|IIT 2000 - Proceedings
|Heiner Ryssel, Lothar Frey, Jozsef Gyulai, Hans Glawischnig
|Institute of Electrical and Electronics Engineers Inc.
|Number of pages
|Published - 2000
|13th IEEE International Conference on Ion Implantation Technology - Alpbach, Austria
Duration: 17 Sep 2000 → 22 Sep 2000
Conference number: 13
|13th IEEE International Conference on Ion Implantation Technology
|17/09/00 → 22/09/00