Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si

Engineering & Materials Science

• Doping (additives) 93%
• Annealing 83%
• Scattering 79%
• Ions 77%
• Ion implantation 56%
• Atoms 43%
• Point defects 32%
• Defects 28%
• Semiconductor devices 24%
• Dissolution 22%
• Crystalline materials 21%
• Nucleation 21%
• Hot Temperature 20%
• Piles 20%
• Oxides 17%
• Temperature 16%
• Substrates 14%

Chemistry

• Implant 82%
• Doping Material 73%
• Annealing 65%
• Energy 39%
• Ion Implantation 34%
• Ion 33%
• Amorphous Material 29%
• Disorder 24%
• Crystal Point Defect 18%
• Nucleation 11%
• Dose 10%
• Semiconductor 10%
• Dissolution 10%
• Surface 8%
• Ambient Reaction Temperature 7%
• Oxide 7%
• Reaction Yield 5%

Physics & Astronomy

• ion scattering 100%
• damage 59%
• annealing 50%
• ion implantation 25%
• energy 24%
• disorders 21%
• defects 15%
• piles 15%
• semiconductor devices 14%
• atoms 14%
• proximity 13%
• point defects 13%
• solid phases 13%
• dissolving 12%
• implantation 12%
• nucleation 10%
• dosage 9%
• oxides 8%
• high resolution 8%
• room temperature 7%
• profiles 7%
• predictions 7%
• temperature 4%