Melting and crystallization of Xe nanoprecipitates in Al under 1 MeV electron irradiation

C. W. Allen, R. C. Birtcher, S. E. Donnelly, M. Song, K. Furuya, N. Ishikawa, K. Mitsuishi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Xe nanoprecipitates have been produced by ion implantation into high purity Al at 300 K. With an off-zone axis high resolution imaging technique, Xe nanocrystals may be clearly structure imaged against a weak structure image of the Al matrix. Under the 1 MeV electron irradiation employed for the HREM observation, the nanoprecipitates exhibit a number of readily observed phenomena including migration within the matrix, changes in shape, faulting, melting, crystallization and coalescence, associated with changes in interface structure. This paper examines the possible mechanisms for melting and crystallization of the nanoprecipitates: beam heating and changes in precipitate volume associated with fluctuations in arrival of Al vacancies and interstitials, or with transport of Xe to and from the Al matrix due to electron irradiation damage in the Al and/or the Xe. Biased fluctuations in the point defect fluxes will produce volume changes in the Al cavity confining the Xe with corresponding deviations from the equilibrium pressure, 2γ/R0, associated with the interfacial tension γ.

LanguageEnglish
JournalJournal of Electron Microscopy
Volume51
Issue numberSUPPL.
DOIs
Publication statusPublished - 27 Mar 2002
Externally publishedYes

Fingerprint

Electron irradiation
electron irradiation
Crystallization
Freezing
Melting
melting
Electrons
crystallization
Faulting
Surface Tension
High resolution electron microscopy
Point defects
matrices
Coalescence
Ion implantation
Nanoparticles
Heating
Nanocrystals
Vacancies
Surface tension

Cite this

Allen, C. W. ; Birtcher, R. C. ; Donnelly, S. E. ; Song, M. ; Furuya, K. ; Ishikawa, N. ; Mitsuishi, K. / Melting and crystallization of Xe nanoprecipitates in Al under 1 MeV electron irradiation. In: Journal of Electron Microscopy. 2002 ; Vol. 51, No. SUPPL.
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Melting and crystallization of Xe nanoprecipitates in Al under 1 MeV electron irradiation. / Allen, C. W.; Birtcher, R. C.; Donnelly, S. E.; Song, M.; Furuya, K.; Ishikawa, N.; Mitsuishi, K.

In: Journal of Electron Microscopy, Vol. 51, No. SUPPL., 27.03.2002.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Melting and crystallization of Xe nanoprecipitates in Al under 1 MeV electron irradiation

AU - Allen, C. W.

AU - Birtcher, R. C.

AU - Donnelly, S. E.

AU - Song, M.

AU - Furuya, K.

AU - Ishikawa, N.

AU - Mitsuishi, K.

PY - 2002/3/27

Y1 - 2002/3/27

N2 - Xe nanoprecipitates have been produced by ion implantation into high purity Al at 300 K. With an off-zone axis high resolution imaging technique, Xe nanocrystals may be clearly structure imaged against a weak structure image of the Al matrix. Under the 1 MeV electron irradiation employed for the HREM observation, the nanoprecipitates exhibit a number of readily observed phenomena including migration within the matrix, changes in shape, faulting, melting, crystallization and coalescence, associated with changes in interface structure. This paper examines the possible mechanisms for melting and crystallization of the nanoprecipitates: beam heating and changes in precipitate volume associated with fluctuations in arrival of Al vacancies and interstitials, or with transport of Xe to and from the Al matrix due to electron irradiation damage in the Al and/or the Xe. Biased fluctuations in the point defect fluxes will produce volume changes in the Al cavity confining the Xe with corresponding deviations from the equilibrium pressure, 2γ/R0, associated with the interfacial tension γ.

AB - Xe nanoprecipitates have been produced by ion implantation into high purity Al at 300 K. With an off-zone axis high resolution imaging technique, Xe nanocrystals may be clearly structure imaged against a weak structure image of the Al matrix. Under the 1 MeV electron irradiation employed for the HREM observation, the nanoprecipitates exhibit a number of readily observed phenomena including migration within the matrix, changes in shape, faulting, melting, crystallization and coalescence, associated with changes in interface structure. This paper examines the possible mechanisms for melting and crystallization of the nanoprecipitates: beam heating and changes in precipitate volume associated with fluctuations in arrival of Al vacancies and interstitials, or with transport of Xe to and from the Al matrix due to electron irradiation damage in the Al and/or the Xe. Biased fluctuations in the point defect fluxes will produce volume changes in the Al cavity confining the Xe with corresponding deviations from the equilibrium pressure, 2γ/R0, associated with the interfacial tension γ.

KW - Aluminium

KW - High-resolution electron microscopy

KW - Irradiation

KW - Melting

KW - Nanocrystal

KW - Phase transition

KW - Xe precipitate

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