Microstructural and Energy‐Dispersive X‐ray Analyses on Argon Ion Implantations in Tantalum Thin Films for Microelectronic Substrates

In the present study, the microstructural and statistical properties of unimplanted in comparison to argon ion‐implanted tantalum‐based thin film surface structures are investigated for potential application in microelectronic thin film substrates. In the study, the argon ions were implanted at the energy of 30 keV and the doses of 1 × 10¹⁷, 3 × 10¹⁷, and 7 × 10¹⁷ (ion/cm²⁾ at an ambient temperature. Two primary goals have been pursued in this study. First, by using atomic force microscopy (AFM) analysis, the roughness of samples, before and after implantation, has been studied. The corrosion apparatus wear has been used to compare resistance against tantalum corrosion for all samples. The results show an increase in resistance against tantalum corrosion after the argon ion implantation process. After the corrosion test, scanning electron microscopy (SEM) analysis was applied to study the sample morphology. The elemental composition of the samples was characterized by using energy‐dispersive X‐ray (EDX) analysis. Second, the statisticalcharacteristics of both unimplanted and implanted samples, using the monofractal analysis with correlation function and correlation length of samples, were studied. The results show, however, that all samples are correlated and that the variation of ion doses has a negligible impact on the values of correlation lengths. Moreover, the study of height distribution and higher‐order moments show the deviation from Gaussian distribution. The calculations of the roughness exponent and fractal dimension indicates that the implanted samples are the self‐affine fractal surfaces.