Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT

S. Gao, P. Butterworth, A. Sambell, C. Sanabria, H. Xu, S. Heikman, U. Mishra, R. A. York

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Citations (Scopus)

Abstract

This paper presents the designs and results of two high-efficiency harmonics-tuned microwave power amplifiers (PA): the first one is a 2 GHz class-F PA in monolithic integrated circuit (MMIC) by using GaN HEMT technology, and the other one is a 2.4S-GHz inverse class-F PA using packaged GaAs pHEMT devices with PCB technology. In the class-F MMIC PA, field-plated GaN HEMT device is used for high-power performance. The 2.0GHz class-F MMIC PA achieves a PAE of 50%, 38 dBm output power, and 6.2 W/mm power density. The inverse class-F PA at 2.45 GHz achieves 22.6 dBm output power and 73% PAE at 3 dB compression, and has very low cost.

Original languageEnglish
Title of host publicationProceedings of the 36th European Microwave Conference, EuMC 2006
PublisherIEEE Computer Society
Pages1719-1722
Number of pages4
ISBN (Print)2960055160, 9782960055160
DOIs
Publication statusPublished - 15 Jan 2007
Externally publishedYes
Event36th European Microwave Conference - Manchester, United Kingdom
Duration: 10 Sep 200615 Sep 2006
Conference number: 36

Conference

Conference36th European Microwave Conference
Abbreviated titleEuMC 2006
Country/TerritoryUnited Kingdom
CityManchester
Period10/09/0615/09/06

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