Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT

S. Gao; P. Butterworth; A. Sambell; C. Sanabria; H. Xu; S. Heikman; U. Mishra; R. A. York

doi:10.1109/EUMC.2006.281473

Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT

S. Gao, P. Butterworth, A. Sambell, C. Sanabria, H. Xu, S. Heikman, U. Mishra, R. A. York

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Citations (Scopus)

Abstract

This paper presents the designs and results of two high-efficiency harmonics-tuned microwave power amplifiers (PA): the first one is a 2 GHz class-F PA in monolithic integrated circuit (MMIC) by using GaN HEMT technology, and the other one is a 2.4S-GHz inverse class-F PA using packaged GaAs pHEMT devices with PCB technology. In the class-F MMIC PA, field-plated GaN HEMT device is used for high-power performance. The 2.0GHz class-F MMIC PA achieves a PAE of 50%, 38 dBm output power, and 6.2 W/mm power density. The inverse class-F PA at 2.45 GHz achieves 22.6 dBm output power and 73% PAE at 3 dB compression, and has very low cost.

Original language	English
Title of host publication	Proceedings of the 36th European Microwave Conference, EuMC 2006
Publisher	IEEE Computer Society
Pages	1719-1722
Number of pages	4
ISBN (Print)	2960055160, 9782960055160
DOIs	https://doi.org/10.1109/EUMC.2006.281473
Publication status	Published - 15 Jan 2007
Externally published	Yes
Event	36th European Microwave Conference - Manchester, United Kingdom Duration: 10 Sept 2006 → 15 Sept 2006 Conference number: 36

Conference

Conference	36th European Microwave Conference
Abbreviated title	EuMC 2006
Country/Territory	United Kingdom
City	Manchester
Period	10/09/06 → 15/09/06

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure
SDG 11 Sustainable Cities and Communities

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Cite this

Gao, S., Butterworth, P., Sambell, A., Sanabria, C., Xu, H., Heikman, S., Mishra, U., & York, R. A. (2007). Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT. In Proceedings of the 36th European Microwave Conference, EuMC 2006 (pp. 1719-1722). Article 4058182 IEEE Computer Society. https://doi.org/10.1109/EUMC.2006.281473

@inproceedings{c3d4f8a9b9f04576bb1e11434366aadb,

title = "Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT",

abstract = "This paper presents the designs and results of two high-efficiency harmonics-tuned microwave power amplifiers (PA): the first one is a 2 GHz class-F PA in monolithic integrated circuit (MMIC) by using GaN HEMT technology, and the other one is a 2.4S-GHz inverse class-F PA using packaged GaAs pHEMT devices with PCB technology. In the class-F MMIC PA, field-plated GaN HEMT device is used for high-power performance. The 2.0GHz class-F MMIC PA achieves a PAE of 50\%, 38 dBm output power, and 6.2 W/mm power density. The inverse class-F PA at 2.45 GHz achieves 22.6 dBm output power and 73\% PAE at 3 dB compression, and has very low cost.",

keywords = "Class F, GaAs, GaN HEMT, High efficiency, Inverse class-F, MMIC, Power amplifiers",

author = "S. Gao and P. Butterworth and A. Sambell and C. Sanabria and H. Xu and S. Heikman and U. Mishra and York, \{R. A.\}",

year = "2007",

month = jan,

day = "15",

doi = "10.1109/EUMC.2006.281473",

language = "English",

isbn = "2960055160",

pages = "1719--1722",

booktitle = "Proceedings of the 36th European Microwave Conference, EuMC 2006",

publisher = "IEEE Computer Society",

address = "United States",

note = "36th European Microwave Conference, EuMC 2006 ; Conference date: 10-09-2006 Through 15-09-2006",

}

Gao, S, Butterworth, P, Sambell, A, Sanabria, C, Xu, H, Heikman, S, Mishra, U & York, RA 2007, Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT. in Proceedings of the 36th European Microwave Conference, EuMC 2006., 4058182, IEEE Computer Society, pp. 1719-1722, 36th European Microwave Conference, Manchester, United Kingdom, 10/09/06. https://doi.org/10.1109/EUMC.2006.281473

TY - GEN

T1 - Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT

AU - Gao, S.

AU - Butterworth, P.

AU - Sambell, A.

AU - Sanabria, C.

AU - Xu, H.

AU - Heikman, S.

AU - Mishra, U.

AU - York, R. A.

N1 - Conference code: 36

PY - 2007/1/15

Y1 - 2007/1/15

N2 - This paper presents the designs and results of two high-efficiency harmonics-tuned microwave power amplifiers (PA): the first one is a 2 GHz class-F PA in monolithic integrated circuit (MMIC) by using GaN HEMT technology, and the other one is a 2.4S-GHz inverse class-F PA using packaged GaAs pHEMT devices with PCB technology. In the class-F MMIC PA, field-plated GaN HEMT device is used for high-power performance. The 2.0GHz class-F MMIC PA achieves a PAE of 50%, 38 dBm output power, and 6.2 W/mm power density. The inverse class-F PA at 2.45 GHz achieves 22.6 dBm output power and 73% PAE at 3 dB compression, and has very low cost.

AB - This paper presents the designs and results of two high-efficiency harmonics-tuned microwave power amplifiers (PA): the first one is a 2 GHz class-F PA in monolithic integrated circuit (MMIC) by using GaN HEMT technology, and the other one is a 2.4S-GHz inverse class-F PA using packaged GaAs pHEMT devices with PCB technology. In the class-F MMIC PA, field-plated GaN HEMT device is used for high-power performance. The 2.0GHz class-F MMIC PA achieves a PAE of 50%, 38 dBm output power, and 6.2 W/mm power density. The inverse class-F PA at 2.45 GHz achieves 22.6 dBm output power and 73% PAE at 3 dB compression, and has very low cost.

KW - Class F

KW - GaAs

KW - GaN HEMT

KW - High efficiency

KW - Inverse class-F

KW - MMIC

KW - Power amplifiers

UR - https://www.scopus.com/pages/publications/41649103969

U2 - 10.1109/EUMC.2006.281473

DO - 10.1109/EUMC.2006.281473

M3 - Conference contribution

AN - SCOPUS:41649103969

SN - 2960055160

SN - 9782960055160

SP - 1719

EP - 1722

BT - Proceedings of the 36th European Microwave Conference, EuMC 2006

PB - IEEE Computer Society

T2 - 36th European Microwave Conference

Y2 - 10 September 2006 through 15 September 2006

ER -

Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT

Abstract

Conference

UN SDGs

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