Migration and coalescence of Xe nanoprecipitates in Al induced by electron irradiation at 300 K

C. W. Allen; R. C. Birtcher; S. E. Donnelly; K. Furuya; N. Ishikawa; M. Song

doi:10.1063/1.123913

Migration and coalescence of Xe nanoprecipitates in Al induced by electron irradiation at 300 K

C. W. Allen, R. C. Birtcher, S. E. Donnelly, K. Furuya, N. Ishikawa, M. Song

Research output: Contribution to journal › Article › peer-review

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Abstract

Effects of 1 MeV electron irradiation on Xe precipitates in Al, formed by ion implantation, have been observed in situ by high-voltage transmission electron microscopy. Individual Xe precipitates undergo melting and recrystallization, migration which leads to coalescence, and shape changes. These processes are driven by the production of defects without either cascade defect production or the introduction of additional Xe atoms. Precipitate migration is due to an irradiation-induced surface diffusion process on the Xe/Al interfaces. Coalescence of close precipitates is enhanced by directed motion as a result of the net displacement of Al atoms out of the volume between them.

Original language	English
Pages (from-to)	2611-2613
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	18
Early online date	27 Apr 1999
DOIs	https://doi.org/10.1063/1.123913
Publication status	Published - 3 May 1999
Externally published	Yes

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abstract = "Effects of 1 MeV electron irradiation on Xe precipitates in Al, formed by ion implantation, have been observed in situ by high-voltage transmission electron microscopy. Individual Xe precipitates undergo melting and recrystallization, migration which leads to coalescence, and shape changes. These processes are driven by the production of defects without either cascade defect production or the introduction of additional Xe atoms. Precipitate migration is due to an irradiation-induced surface diffusion process on the Xe/Al interfaces. Coalescence of close precipitates is enhanced by directed motion as a result of the net displacement of Al atoms out of the volume between them.",

author = "Allen, {C. W.} and Birtcher, {R. C.} and Donnelly, {S. E.} and K. Furuya and N. Ishikawa and M. Song",

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AU - Allen, C. W.

AU - Birtcher, R. C.

AU - Donnelly, S. E.

AU - Furuya, K.

AU - Ishikawa, N.

AU - Song, M.

PY - 1999/5/3

Y1 - 1999/5/3

N2 - Effects of 1 MeV electron irradiation on Xe precipitates in Al, formed by ion implantation, have been observed in situ by high-voltage transmission electron microscopy. Individual Xe precipitates undergo melting and recrystallization, migration which leads to coalescence, and shape changes. These processes are driven by the production of defects without either cascade defect production or the introduction of additional Xe atoms. Precipitate migration is due to an irradiation-induced surface diffusion process on the Xe/Al interfaces. Coalescence of close precipitates is enhanced by directed motion as a result of the net displacement of Al atoms out of the volume between them.

AB - Effects of 1 MeV electron irradiation on Xe precipitates in Al, formed by ion implantation, have been observed in situ by high-voltage transmission electron microscopy. Individual Xe precipitates undergo melting and recrystallization, migration which leads to coalescence, and shape changes. These processes are driven by the production of defects without either cascade defect production or the introduction of additional Xe atoms. Precipitate migration is due to an irradiation-induced surface diffusion process on the Xe/Al interfaces. Coalescence of close precipitates is enhanced by directed motion as a result of the net displacement of Al atoms out of the volume between them.

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ER -

Migration and coalescence of Xe nanoprecipitates in Al induced by electron irradiation at 300 K

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