Migration and coalescence of Xe nanoprecipitates in Al induced by electron irradiation at 300 K

C. W. Allen, R. C. Birtcher, S. E. Donnelly, K. Furuya, N. Ishikawa, M. Song

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Effects of 1 MeV electron irradiation on Xe precipitates in Al, formed by ion implantation, have been observed in situ by high-voltage transmission electron microscopy. Individual Xe precipitates undergo melting and recrystallization, migration which leads to coalescence, and shape changes. These processes are driven by the production of defects without either cascade defect production or the introduction of additional Xe atoms. Precipitate migration is due to an irradiation-induced surface diffusion process on the Xe/Al interfaces. Coalescence of close precipitates is enhanced by directed motion as a result of the net displacement of Al atoms out of the volume between them.

Original languageEnglish
Pages (from-to)2611-2613
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number18
Early online date27 Apr 1999
DOIs
Publication statusPublished - 3 May 1999
Externally publishedYes

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