Modification of GaAs Schottky Barriers Using a–Si:H Interfacial Layers

A. J. Sambell, John Wood

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An investigation into the electrical properties of metal/ a-Si:H / n-GaAs diode structures, with layers of hydrogenated amorphous silicon (a-Si:H) up to 1920 A thick, is outlined. A dramatic increase in the forward turn-on voltage is observed as the thickness of the a-Si:H layer is increased. The diode behavior can be explained by considering three effects in series: 1) an a-Sl:H / GaAs barrier of about 0.6 eV, consistent with Fermi-level pinning in GaAs; 2) a metal / a-Si:H barrier, dependent on the metallization; and 3) space-charge-limited current (SCLC) in the bulk a-Si:H. The SCLC effectively gives rise to a voltage-dependent resistance and causes the increased turn-on voltages.

Original languageEnglish
Article number62964
Pages (from-to)385-387
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 1 Sep 1990
Externally publishedYes

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