Modification of GaAs Schottky Barriers Using a–Si:H Interfacial Layers

A. J. Sambell; John Wood

doi:10.1109/55.62964

Modification of GaAs Schottky Barriers Using a–Si:H Interfacial Layers

A. J. Sambell, John Wood

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

An investigation into the electrical properties of metal/ a-Si:H / n-GaAs diode structures, with layers of hydrogenated amorphous silicon (a-Si:H) up to 1920 A thick, is outlined. A dramatic increase in the forward turn-on voltage is observed as the thickness of the a-Si:H layer is increased. The diode behavior can be explained by considering three effects in series: 1) an a-Sl:H / GaAs barrier of about 0.6 eV, consistent with Fermi-level pinning in GaAs; 2) a metal / a-Si:H barrier, dependent on the metallization; and 3) space-charge-limited current (SCLC) in the bulk a-Si:H. The SCLC effectively gives rise to a voltage-dependent resistance and causes the increased turn-on voltages.

Original language	English
Article number	62964
Pages (from-to)	385-387
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	11
Issue number	9
DOIs	https://doi.org/10.1109/55.62964
Publication status	Published - 1 Sept 1990
Externally published	Yes

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@article{3b4ba67b79f74522a4f23125327fe113,

title = "Modification of GaAs Schottky Barriers Using a–Si:H Interfacial Layers",

abstract = "An investigation into the electrical properties of metal/ a-Si:H / n-GaAs diode structures, with layers of hydrogenated amorphous silicon (a-Si:H) up to 1920 A thick, is outlined. A dramatic increase in the forward turn-on voltage is observed as the thickness of the a-Si:H layer is increased. The diode behavior can be explained by considering three effects in series: 1) an a-Sl:H / GaAs barrier of about 0.6 eV, consistent with Fermi-level pinning in GaAs; 2) a metal / a-Si:H barrier, dependent on the metallization; and 3) space-charge-limited current (SCLC) in the bulk a-Si:H. The SCLC effectively gives rise to a voltage-dependent resistance and causes the increased turn-on voltages.",

keywords = "Gallium arsenide, Schottky barriers, Schottky diodes, Voltage, Plasma temperature, Interface states, Plasma applications, Plasma chemistry, Silicon, Logic circuits",

author = "Sambell, \{A. J.\} and John Wood",

note = "Funding Information: Manuscript received April 10, 1990; revised June 8, 1990. This work was supported by the U.K. Science and Engineering Research Council. The authors are with the Department of Electrical Engineering, University of York, Heslington, York YO1 5DD, England. IEEE Log Number 9037954.",

year = "1990",

month = sep,

day = "1",

doi = "10.1109/55.62964",

language = "English",

volume = "11",

pages = "385--387",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

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TY - JOUR

T1 - Modification of GaAs Schottky Barriers Using a–Si:H Interfacial Layers

AU - Sambell, A. J.

AU - Wood, John

N1 - Funding Information: Manuscript received April 10, 1990; revised June 8, 1990. This work was supported by the U.K. Science and Engineering Research Council. The authors are with the Department of Electrical Engineering, University of York, Heslington, York YO1 5DD, England. IEEE Log Number 9037954.

PY - 1990/9/1

Y1 - 1990/9/1

N2 - An investigation into the electrical properties of metal/ a-Si:H / n-GaAs diode structures, with layers of hydrogenated amorphous silicon (a-Si:H) up to 1920 A thick, is outlined. A dramatic increase in the forward turn-on voltage is observed as the thickness of the a-Si:H layer is increased. The diode behavior can be explained by considering three effects in series: 1) an a-Sl:H / GaAs barrier of about 0.6 eV, consistent with Fermi-level pinning in GaAs; 2) a metal / a-Si:H barrier, dependent on the metallization; and 3) space-charge-limited current (SCLC) in the bulk a-Si:H. The SCLC effectively gives rise to a voltage-dependent resistance and causes the increased turn-on voltages.

AB - An investigation into the electrical properties of metal/ a-Si:H / n-GaAs diode structures, with layers of hydrogenated amorphous silicon (a-Si:H) up to 1920 A thick, is outlined. A dramatic increase in the forward turn-on voltage is observed as the thickness of the a-Si:H layer is increased. The diode behavior can be explained by considering three effects in series: 1) an a-Sl:H / GaAs barrier of about 0.6 eV, consistent with Fermi-level pinning in GaAs; 2) a metal / a-Si:H barrier, dependent on the metallization; and 3) space-charge-limited current (SCLC) in the bulk a-Si:H. The SCLC effectively gives rise to a voltage-dependent resistance and causes the increased turn-on voltages.

KW - Gallium arsenide

KW - Schottky barriers

KW - Schottky diodes

KW - Voltage

KW - Plasma temperature

KW - Interface states

KW - Plasma applications

KW - Plasma chemistry

KW - Silicon

KW - Logic circuits

UR - https://www.scopus.com/pages/publications/0025493281

U2 - 10.1109/55.62964

DO - 10.1109/55.62964

M3 - Article

AN - SCOPUS:0025493281

SN - 0741-3106

VL - 11

SP - 385

EP - 387

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 62964

ER -

Modification of GaAs Schottky Barriers Using a–Si:H Interfacial Layers

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