Modification of He implantation induced defects using fluorine co-implantation

D. Alquier, G. Gaudin, M. F. Beaufort, S. E. Donnelly, L. Haworth, F. Cayrel

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

During device manufacture, metal contamination has a large effect on silicon-based device performance. Of the available gettering techniques, helium implantation is widely used but the high fluence required is a major drawback. In this paper, the impact of F co-implantation on He implantation-induced defects has been carefully studied. Firstly, our results show that both interstitial and vacancy defects are present in the defect band for all implantation conditions. We show that F implantation may lead to cavity formation at high temperature as expected. The TEM observations also show that, at high temperature, the shape and size of the He-induced defects are significantly affected by the fluorine co-implantation. In particular, cavities are drastically modified by the addition of F, which promotes cavity growth. These results enable us to understand the defect interactions better and constitute a good background to gettering techniques for future device processing.

Original languageEnglish
Pages (from-to)240-243
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume257
Issue number1-2
Early online date10 Jan 2007
DOIs
Publication statusPublished - 1 Apr 2007
Externally publishedYes

    Fingerprint

Cite this