Modification of He implantation induced defects using fluorine co-implantation

D. Alquier, G. Gaudin, M. F. Beaufort, S. E. Donnelly, L. Haworth, F. Cayrel

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

During device manufacture, metal contamination has a large effect on silicon-based device performance. Of the available gettering techniques, helium implantation is widely used but the high fluence required is a major drawback. In this paper, the impact of F co-implantation on He implantation-induced defects has been carefully studied. Firstly, our results show that both interstitial and vacancy defects are present in the defect band for all implantation conditions. We show that F implantation may lead to cavity formation at high temperature as expected. The TEM observations also show that, at high temperature, the shape and size of the He-induced defects are significantly affected by the fluorine co-implantation. In particular, cavities are drastically modified by the addition of F, which promotes cavity growth. These results enable us to understand the defect interactions better and constitute a good background to gettering techniques for future device processing.

Original languageEnglish
Pages (from-to)240-243
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume257
Issue number1-2
Early online date10 Jan 2007
DOIs
Publication statusPublished - 1 Apr 2007
Externally publishedYes

Fingerprint

Fluorine
fluorine
implantation
Defects
defects
cavities
Vacancies
Helium
Contamination
fluence
interstitials
Transmission electron microscopy
contamination
Silicon
Temperature
helium
Processing
transmission electron microscopy
Metals
silicon

Cite this

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title = "Modification of He implantation induced defects using fluorine co-implantation",
abstract = "During device manufacture, metal contamination has a large effect on silicon-based device performance. Of the available gettering techniques, helium implantation is widely used but the high fluence required is a major drawback. In this paper, the impact of F co-implantation on He implantation-induced defects has been carefully studied. Firstly, our results show that both interstitial and vacancy defects are present in the defect band for all implantation conditions. We show that F implantation may lead to cavity formation at high temperature as expected. The TEM observations also show that, at high temperature, the shape and size of the He-induced defects are significantly affected by the fluorine co-implantation. In particular, cavities are drastically modified by the addition of F, which promotes cavity growth. These results enable us to understand the defect interactions better and constitute a good background to gettering techniques for future device processing.",
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Modification of He implantation induced defects using fluorine co-implantation. / Alquier, D.; Gaudin, G.; Beaufort, M. F.; Donnelly, S. E.; Haworth, L.; Cayrel, F.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, No. 1-2 , 01.04.2007, p. 240-243.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Modification of He implantation induced defects using fluorine co-implantation

AU - Alquier, D.

AU - Gaudin, G.

AU - Beaufort, M. F.

AU - Donnelly, S. E.

AU - Haworth, L.

AU - Cayrel, F.

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AB - During device manufacture, metal contamination has a large effect on silicon-based device performance. Of the available gettering techniques, helium implantation is widely used but the high fluence required is a major drawback. In this paper, the impact of F co-implantation on He implantation-induced defects has been carefully studied. Firstly, our results show that both interstitial and vacancy defects are present in the defect band for all implantation conditions. We show that F implantation may lead to cavity formation at high temperature as expected. The TEM observations also show that, at high temperature, the shape and size of the He-induced defects are significantly affected by the fluorine co-implantation. In particular, cavities are drastically modified by the addition of F, which promotes cavity growth. These results enable us to understand the defect interactions better and constitute a good background to gettering techniques for future device processing.

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