A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using ensemble Monte Carlo simulations. The hole subband structure is calculated using the 6 × 6 k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype terahertz Si/SiGe quantum cascade structures.
|Number of pages||9|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Early online date||10 Jun 2004|
|Publication status||Published - 15 Jun 2004|