Monte Carlo simulations of hole dynamics in SiGe/Si terahertz quantum-cascade structures

Z. Ikonić; R. W. Kelsall; P. Harrison

doi:10.1103/PhysRevB.69.235308

Monte Carlo simulations of hole dynamics in SiGe/Si terahertz quantum-cascade structures

Z. Ikonić, R. W. Kelsall, P. Harrison

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using ensemble Monte Carlo simulations. The hole subband structure is calculated using the 6 × 6 k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype terahertz Si/SiGe quantum cascade structures.

Original language	English
Article number	235308
Pages (from-to)	1-9
Number of pages	9
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	23
Early online date	10 Jun 2004
DOIs	https://doi.org/10.1103/PhysRevB.69.235308
Publication status	Published - 15 Jun 2004
Externally published	Yes

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title = "Monte Carlo simulations of hole dynamics in SiGe/Si terahertz quantum-cascade structures",

abstract = "A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using ensemble Monte Carlo simulations. The hole subband structure is calculated using the 6 × 6 k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype terahertz Si/SiGe quantum cascade structures.",

keywords = "Quantum well, Monte Carlo simulations",

author = "Z. Ikoni{\'c} and Kelsall, {R. W.} and P. Harrison",

note = "Funding Information: This work was supported by DARPA/ USAF Contract No. F19628-99-C-0074. The authors thank R. A. Soref (Hanscom AFB) for useful discussions.",

year = "2004",

month = jun,

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doi = "10.1103/PhysRevB.69.235308",

language = "English",

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T1 - Monte Carlo simulations of hole dynamics in SiGe/Si terahertz quantum-cascade structures

AU - Ikonić, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

N1 - Funding Information: This work was supported by DARPA/ USAF Contract No. F19628-99-C-0074. The authors thank R. A. Soref (Hanscom AFB) for useful discussions.

PY - 2004/6/15

Y1 - 2004/6/15

N2 - A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using ensemble Monte Carlo simulations. The hole subband structure is calculated using the 6 × 6 k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype terahertz Si/SiGe quantum cascade structures.

AB - A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using ensemble Monte Carlo simulations. The hole subband structure is calculated using the 6 × 6 k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype terahertz Si/SiGe quantum cascade structures.

KW - Quantum well

KW - Monte Carlo simulations

UR - http://www.scopus.com/inward/record.url?scp=42749100029&partnerID=8YFLogxK

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DO - 10.1103/PhysRevB.69.235308

M3 - Article

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 2469-9950

IS - 23

M1 - 235308

ER -

Monte Carlo simulations of hole dynamics in SiGe/Si terahertz quantum-cascade structures

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