Abstract
A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using ensemble Monte Carlo simulations. The hole subband structure is calculated using the 6 × 6 k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype terahertz Si/SiGe quantum cascade structures.
| Original language | English |
|---|---|
| Article number | 235308 |
| Pages (from-to) | 1-9 |
| Number of pages | 9 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 69 |
| Issue number | 23 |
| Early online date | 10 Jun 2004 |
| DOIs | |
| Publication status | Published - 15 Jun 2004 |
| Externally published | Yes |