Monte Carlo Simulations of Hole Dynamics in Si/SiGe Quantum Cascade Structures

Z. Ikonić; P. Harrison; R. W. Kelsall

doi:10.1023/A:1020769306788

Monte Carlo Simulations of Hole Dynamics in Si/SiGe Quantum Cascade Structures

Z. Ikonić, P. Harrison, R. W. Kelsall

University of Leeds

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report the first detailed ensemble Monte Carlo simulation of hole dynamics in cascaded p-Si/SiGe quantum wells. The hole subband structure is calculated using the 6 × 6 k · p model. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. The scattering mechanisms included are the alloy disorder, acoustic and optical phonon scattering. Results are presented for prototype Si/SiGe cascade structures.

Original language	English
Pages (from-to)	191-194
Number of pages	4
Journal	Journal of Computational Electronics
Volume	1
Issue number	1-2
DOIs	https://doi.org/10.1023/A:1020769306788
Publication status	Published - 1 Jul 2002
Externally published	Yes

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title = "Monte Carlo Simulations of Hole Dynamics in Si/SiGe Quantum Cascade Structures",

abstract = "We report the first detailed ensemble Monte Carlo simulation of hole dynamics in cascaded p-Si/SiGe quantum wells. The hole subband structure is calculated using the 6 × 6 k · p model. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. The scattering mechanisms included are the alloy disorder, acoustic and optical phonon scattering. Results are presented for prototype Si/SiGe cascade structures.",

keywords = "Anisotropy, Electronic Material, Mechanical Engineer, Monte Carlo Simulation, Optical Phonon",

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AU - Ikonić, Z.

AU - Harrison, P.

AU - Kelsall, R. W.

PY - 2002/7/1

Y1 - 2002/7/1

N2 - We report the first detailed ensemble Monte Carlo simulation of hole dynamics in cascaded p-Si/SiGe quantum wells. The hole subband structure is calculated using the 6 × 6 k · p model. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. The scattering mechanisms included are the alloy disorder, acoustic and optical phonon scattering. Results are presented for prototype Si/SiGe cascade structures.

AB - We report the first detailed ensemble Monte Carlo simulation of hole dynamics in cascaded p-Si/SiGe quantum wells. The hole subband structure is calculated using the 6 × 6 k · p model. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. The scattering mechanisms included are the alloy disorder, acoustic and optical phonon scattering. Results are presented for prototype Si/SiGe cascade structures.

KW - Anisotropy

KW - Electronic Material

KW - Mechanical Engineer

KW - Monte Carlo Simulation

KW - Optical Phonon

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SP - 191

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JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

IS - 1-2

ER -

Monte Carlo Simulations of Hole Dynamics in Si/SiGe Quantum Cascade Structures

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