MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

P. Normand, E. Kapetanakis, D. Tsoukalas, G. Kamoulakos, K. Beltsios, J. Van Den Berg, S. Zhang

Research output: Contribution to journalArticle

15 Citations (Scopus)


The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics.

Original languageEnglish
Pages (from-to)145-147
Number of pages3
JournalMaterials Science and Engineering C
Issue number1-2
Publication statusPublished - 20 Aug 2001
Externally publishedYes


Cite this