MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

P. Normand, E. Kapetanakis, D. Tsoukalas, G. Kamoulakos, K. Beltsios, J. Van Den Berg, S. Zhang

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics.

LanguageEnglish
Pages145-147
Number of pages3
JournalMaterials Science and Engineering C
Volume15
Issue number1-2
DOIs
Publication statusPublished - 20 Aug 2001
Externally publishedYes

Fingerprint

Silicon
Ion implantation
Nanocrystals
ion implantation
nanocrystals
Data storage equipment
silicon
dosage
Oxides
energy
implantation
Annealing
Transmission electron microscopy
transmission electron microscopy
annealing
oxides

Cite this

Normand, P. ; Kapetanakis, E. ; Tsoukalas, D. ; Kamoulakos, G. ; Beltsios, K. ; Van Den Berg, J. ; Zhang, S. / MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation. In: Materials Science and Engineering C. 2001 ; Vol. 15, No. 1-2. pp. 145-147.
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MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation. / Normand, P.; Kapetanakis, E.; Tsoukalas, D.; Kamoulakos, G.; Beltsios, K.; Van Den Berg, J.; Zhang, S.

In: Materials Science and Engineering C, Vol. 15, No. 1-2, 20.08.2001, p. 145-147.

Research output: Contribution to journalArticle

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AU - Kapetanakis, E.

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AU - Van Den Berg, J.

AU - Zhang, S.

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