The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics.
|Number of pages||3|
|Journal||Materials Science and Engineering C|
|Publication status||Published - 20 Aug 2001|