MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

P. Normand; E. Kapetanakis; D. Tsoukalas; G. Kamoulakos; K. Beltsios; J. Van Den Berg; S. Zhang

doi:10.1016/S0928-4931(01)00251-X

MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

P. Normand, E. Kapetanakis, D. Tsoukalas, G. Kamoulakos, K. Beltsios, J. Van Den Berg, S. Zhang

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si⁺ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics.

Original language	English
Pages (from-to)	145-147
Number of pages	3
Journal	Materials Science and Engineering C
Volume	15
Issue number	1-2
DOIs	https://doi.org/10.1016/S0928-4931(01)00251-X
Publication status	Published - 20 Aug 2001
Externally published	Yes

Access to Document

10.1016/S0928-4931(01)00251-X

Cite this

@article{c157c8a6c3124f3b9afad4890b276caa,

title = "MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation",

abstract = "The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics.",

keywords = "Implantation, Memory, Nanocrystals, Si",

author = "P. Normand and E. Kapetanakis and D. Tsoukalas and G. Kamoulakos and K. Beltsios and {Van Den Berg}, J. and S. Zhang",

year = "2001",

month = aug,

day = "20",

doi = "10.1016/S0928-4931(01)00251-X",

language = "English",

volume = "15",

pages = "145--147",

journal = "Materials Science and Engineering C",

issn = "0928-4931",

publisher = "Elsevier Limited",

number = "1-2",

}

TY - JOUR

T1 - MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

AU - Normand, P.

AU - Kapetanakis, E.

AU - Tsoukalas, D.

AU - Kamoulakos, G.

AU - Beltsios, K.

AU - Van Den Berg, J.

AU - Zhang, S.

PY - 2001/8/20

Y1 - 2001/8/20

N2 - The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics.

AB - The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics.

KW - Implantation

KW - Memory

KW - Nanocrystals

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=0034840713&partnerID=8YFLogxK

U2 - 10.1016/S0928-4931(01)00251-X

DO - 10.1016/S0928-4931(01)00251-X

M3 - Article

AN - SCOPUS:0034840713

SN - 0928-4931

VL - 15

SP - 145

EP - 147

JO - Materials Science and Engineering C

JF - Materials Science and Engineering C

IS - 1-2

ER -

MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this