MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

E. Kapetanakis, P. Normand, D. Tsoukalas, G. Kamoulakos, D. Kouvatsos, J. Stoemenos, S. Zhang, J. Van Den Berg, D. G. Armour

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)


Metal Oxide Semiconductor Field Effect Transistor (MOSFET) memory devices using silicon nanocrystals as charge storage elements have been fabricated. The nanocrystals are obtained by Si ion implantation at very low energy (1keV) into a thin thermal oxide (8 nm) and subsequent annealing. The memory characteristics of the devices under static and dynamic operation are reported. These devices exhibit fast write/erase characteristics at low voltage operation. The presence of interface states and defects that originate from the nanocrystal formation process is also found to have a strong effect on the device transfer characteristics.

Original languageEnglish
Title of host publicationProceedings of the 30th European Solid-State Device Research Conference
Subtitle of host publicationESSDERC 2000
EditorsW. A. Lane, Gabriel M. Crean, Frank A. McCabe, H. Grunbacher
PublisherIEEE Computer Society
Number of pages4
ISBN (Print)9782863322482, 2863322486
Publication statusPublished - 2000
Externally publishedYes
Event30th European Solid-State Device Research Conference - Cork, Ireland
Duration: 11 Sep 200013 Sep 2000
Conference number: 30

Publication series

NameEuropean Solid-State Device Research Conference
PublisherInstitute of Electrical and Electronics Engineers
ISSN (Print)1930-8876


Conference30th European Solid-State Device Research Conference
Abbreviated titleESSDERC 2000
Internet address


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