MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

E. Kapetanakis, P. Normand, D. Tsoukalas, G. Kamoulakos, D. Kouvatsos, J. Stoemenos, S. Zhang, J. Van Den Berg, D. G. Armour

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) memory devices using silicon nanocrystals as charge storage elements have been fabricated. The nanocrystals are obtained by Si ion implantation at very low energy (1keV) into a thin thermal oxide (8 nm) and subsequent annealing. The memory characteristics of the devices under static and dynamic operation are reported. These devices exhibit fast write/erase characteristics at low voltage operation. The presence of interface states and defects that originate from the nanocrystal formation process is also found to have a strong effect on the device transfer characteristics.

Original languageEnglish
Title of host publicationProceedings of the 30th European Solid-State Device Research Conference
Subtitle of host publicationESSDERC 2000
EditorsW. A. Lane, Gabriel M. Crean, Frank A. McCabe, H. Grunbacher
PublisherIEEE Computer Society
Pages476-479
Number of pages4
ISBN (Print)9782863322482, 2863322486
DOIs
Publication statusPublished - 2000
Externally publishedYes
Event30th European Solid-State Device Research Conference - Cork, Ireland
Duration: 11 Sep 200013 Sep 2000
Conference number: 30
https://www.worldcat.org/title/essderc-2000-proceedings-of-the-30th-european-solid-state-device-research-conference-cork-ireland-11-13-september-2000/oclc/49944586

Publication series

NameEuropean Solid-State Device Research Conference
PublisherInstitute of Electrical and Electronics Engineers
ISSN (Print)1930-8876

Conference

Conference30th European Solid-State Device Research Conference
Abbreviated titleESSDERC 2000
CountryIreland
CityCork
Period11/09/0013/09/00
Internet address

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  • Cite this

    Kapetanakis, E., Normand, P., Tsoukalas, D., Kamoulakos, G., Kouvatsos, D., Stoemenos, J., Zhang, S., Van Den Berg, J., & Armour, D. G. (2000). MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation. In W. A. Lane, G. M. Crean, F. A. McCabe, & H. Grunbacher (Eds.), Proceedings of the 30th European Solid-State Device Research Conference: ESSDERC 2000 (pp. 476-479). [1503748] (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194818