MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

E. Kapetanakis; P. Normand; D. Tsoukalas; G. Kamoulakos; D. Kouvatsos; J. Stoemenos; S. Zhang; J. Van Den Berg; D. G. Armour

doi:10.1109/ESSDERC.2000.194818

MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

E. Kapetanakis, P. Normand, D. Tsoukalas, G. Kamoulakos, D. Kouvatsos, J. Stoemenos, S. Zhang, J. Van Den Berg, D. G. Armour

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) memory devices using silicon nanocrystals as charge storage elements have been fabricated. The nanocrystals are obtained by Si ion implantation at very low energy (1keV) into a thin thermal oxide (8 nm) and subsequent annealing. The memory characteristics of the devices under static and dynamic operation are reported. These devices exhibit fast write/erase characteristics at low voltage operation. The presence of interface states and defects that originate from the nanocrystal formation process is also found to have a strong effect on the device transfer characteristics.

Original language	English
Title of host publication	Proceedings of the 30th European Solid-State Device Research Conference
Subtitle of host publication	ESSDERC 2000
Editors	W. A. Lane, Gabriel M. Crean, Frank A. McCabe, H. Grunbacher
Publisher	IEEE Computer Society
Pages	476-479
Number of pages	4
ISBN (Print)	9782863322482, 2863322486
DOIs	https://doi.org/10.1109/ESSDERC.2000.194818
Publication status	Published - 2000
Externally published	Yes
Event	30th European Solid-State Device Research Conference - Cork, Ireland Duration: 11 Sept 2000 → 13 Sept 2000 Conference number: 30 https://www.worldcat.org/title/essderc-2000-proceedings-of-the-30th-european-solid-state-device-research-conference-cork-ireland-11-13-september-2000/oclc/49944586

Publication series

Name	European Solid-State Device Research Conference
Publisher	Institute of Electrical and Electronics Engineers
ISSN (Print)	1930-8876

Conference

Conference	30th European Solid-State Device Research Conference
Abbreviated title	ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	11/09/00 → 13/09/00
Internet address	https://www.worldcat.org/title/essderc-2000-proceedings-of-the-30th-european-solid-state-device-research-conference-cork-ireland-11-13-september-2000/oclc/49944586

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10.1109/ESSDERC.2000.194818Licence: Unspecified

Cite this

Kapetanakis, E., Normand, P., Tsoukalas, D., Kamoulakos, G., Kouvatsos, D., Stoemenos, J., Zhang, S., Van Den Berg, J., & Armour, D. G. (2000). MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation. In W. A. Lane, G. M. Crean, F. A. McCabe, & H. Grunbacher (Eds.), Proceedings of the 30th European Solid-State Device Research Conference: ESSDERC 2000 (pp. 476-479). Article 1503748 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194818

Kapetanakis, E. ; Normand, P. ; Tsoukalas, D. et al. / MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation. Proceedings of the 30th European Solid-State Device Research Conference: ESSDERC 2000 . editor / W. A. Lane ; Gabriel M. Crean ; Frank A. McCabe ; H. Grunbacher. IEEE Computer Society, 2000. pp. 476-479 (European Solid-State Device Research Conference).

@inproceedings{fd8b52ede68a4a28978e32ce867107b1,

title = "MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation",

abstract = "Metal Oxide Semiconductor Field Effect Transistor (MOSFET) memory devices using silicon nanocrystals as charge storage elements have been fabricated. The nanocrystals are obtained by Si ion implantation at very low energy (1keV) into a thin thermal oxide (8 nm) and subsequent annealing. The memory characteristics of the devices under static and dynamic operation are reported. These devices exhibit fast write/erase characteristics at low voltage operation. The presence of interface states and defects that originate from the nanocrystal formation process is also found to have a strong effect on the device transfer characteristics.",

keywords = "silicon, nanocrystals, ion implantation, annealing, fabrication, nonvolatile memory, nitrogen, physics, MOSFET circuits, tunneling",

author = "E. Kapetanakis and P. Normand and D. Tsoukalas and G. Kamoulakos and D. Kouvatsos and J. Stoemenos and S. Zhang and \{Van Den Berg\}, J. and Armour, \{D. G.\}",

year = "2000",

doi = "10.1109/ESSDERC.2000.194818",

language = "English",

isbn = "9782863322482",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "476--479",

editor = "Lane, \{W. A.\} and Crean, \{Gabriel M.\} and McCabe, \{Frank A.\} and H. Grunbacher",

booktitle = "Proceedings of the 30th European Solid-State Device Research Conference",

address = "United States",

note = "30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

url = "https://www.worldcat.org/title/essderc-2000-proceedings-of-the-30th-european-solid-state-device-research-conference-cork-ireland-11-13-september-2000/oclc/49944586",

}

Kapetanakis, E, Normand, P, Tsoukalas, D, Kamoulakos, G, Kouvatsos, D, Stoemenos, J, Zhang, S, Van Den Berg, J & Armour, DG 2000, MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation. in WA Lane, GM Crean, FA McCabe & H Grunbacher (eds), Proceedings of the 30th European Solid-State Device Research Conference: ESSDERC 2000 ., 1503748, European Solid-State Device Research Conference, IEEE Computer Society, pp. 476-479, 30th European Solid-State Device Research Conference, Cork, Ireland, 11/09/00. https://doi.org/10.1109/ESSDERC.2000.194818

MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation. / Kapetanakis, E.; Normand, P.; Tsoukalas, D. et al.
Proceedings of the 30th European Solid-State Device Research Conference: ESSDERC 2000 . ed. / W. A. Lane; Gabriel M. Crean; Frank A. McCabe; H. Grunbacher. IEEE Computer Society, 2000. p. 476-479 1503748 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

AU - Kapetanakis, E.

AU - Normand, P.

AU - Tsoukalas, D.

AU - Kamoulakos, G.

AU - Kouvatsos, D.

AU - Stoemenos, J.

AU - Zhang, S.

AU - Van Den Berg, J.

AU - Armour, D. G.

N1 - Conference code: 30

PY - 2000

Y1 - 2000

N2 - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) memory devices using silicon nanocrystals as charge storage elements have been fabricated. The nanocrystals are obtained by Si ion implantation at very low energy (1keV) into a thin thermal oxide (8 nm) and subsequent annealing. The memory characteristics of the devices under static and dynamic operation are reported. These devices exhibit fast write/erase characteristics at low voltage operation. The presence of interface states and defects that originate from the nanocrystal formation process is also found to have a strong effect on the device transfer characteristics.

AB - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) memory devices using silicon nanocrystals as charge storage elements have been fabricated. The nanocrystals are obtained by Si ion implantation at very low energy (1keV) into a thin thermal oxide (8 nm) and subsequent annealing. The memory characteristics of the devices under static and dynamic operation are reported. These devices exhibit fast write/erase characteristics at low voltage operation. The presence of interface states and defects that originate from the nanocrystal formation process is also found to have a strong effect on the device transfer characteristics.

KW - silicon

KW - nanocrystals

KW - ion implantation

KW - annealing

KW - fabrication

KW - nonvolatile memory

KW - nitrogen

KW - physics

KW - MOSFET circuits

KW - tunneling

UR - https://www.scopus.com/pages/publications/84907821123

U2 - 10.1109/ESSDERC.2000.194818

DO - 10.1109/ESSDERC.2000.194818

M3 - Conference contribution

AN - SCOPUS:84907821123

SN - 9782863322482

SN - 2863322486

T3 - European Solid-State Device Research Conference

SP - 476

EP - 479

BT - Proceedings of the 30th European Solid-State Device Research Conference

A2 - Lane, W. A.

A2 - Crean, Gabriel M.

A2 - McCabe, Frank A.

A2 - Grunbacher, H.

PB - IEEE Computer Society

T2 - 30th European Solid-State Device Research Conference

Y2 - 11 September 2000 through 13 September 2000

ER -

Kapetanakis E, Normand P, Tsoukalas D, Kamoulakos G, Kouvatsos D, Stoemenos J et al. MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation. In Lane WA, Crean GM, McCabe FA, Grunbacher H, editors, Proceedings of the 30th European Solid-State Device Research Conference: ESSDERC 2000 . IEEE Computer Society. 2000. p. 476-479. 1503748. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2000.194818

MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

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