Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium

D. Giubertoni, G. Pepponi, B. Beckhoff, P. Hoenicke, S. Gennaro, F. Meirer, D. Ingerle, G. Steinhauser, M. Fried, P. Petrik, A. Parisini, M. A. Reading, C. Streli, J. A. Van Den Berg, M. Bersani

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The use of ultra shallow distributions of dopant in silicon to realize source and drain extensions in CMOS devices requires the development of analytical techniques able to provide their quantitative characterization. Information like retained dopant fluence, depth distribution and damage evolution are of fundamental importance to tailor the ultra shallow p/n junctions. In this work a summary of a complementary approach developed within an European multi-laboratories consortium (ANNA) is reported. Results obtained with several techniques on arsenic ultra low energy (0.5-5 keV) implants in Si are described. The employed techniques were secondary ion mass spectrometry, grazing incidence x-ray fluorescence (with either conventional or synchrotron radiation excitation), neutron activation analysis, medium energy ion scattering, Z-contrast annular dark field scanning transmission electron microscopy and spectroscopic ellipsometry. The cross comparisons of dose measurements, dopant distribution and damage build-up behavior enabled a detailed characterization of the implanted samples and identified the overlap of information from each analytical techniques.
LanguageEnglish
Pages45-49
Number of pages5
JournalAIP Conference Proceedings
Volume1173
DOIs
Publication statusPublished - 14 Oct 2009
Externally publishedYes

Fingerprint

arsenic
silicon
damage
x ray fluorescence
neutron activation analysis
ion scattering
p-n junctions
grazing incidence
secondary ion mass spectrometry
ellipsometry
CMOS
synchrotron radiation
fluence
dosage
transmission electron microscopy
scanning electron microscopy
energy
radiation
excitation

Cite this

Giubertoni, D., Pepponi, G., Beckhoff, B., Hoenicke, P., Gennaro, S., Meirer, F., ... Bersani, M. (2009). Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. AIP Conference Proceedings, 1173, 45-49. https://doi.org/10.1063/1.3251258
Giubertoni, D. ; Pepponi, G. ; Beckhoff, B. ; Hoenicke, P. ; Gennaro, S. ; Meirer, F. ; Ingerle, D. ; Steinhauser, G. ; Fried, M. ; Petrik, P. ; Parisini, A. ; Reading, M. A. ; Streli, C. ; Van Den Berg, J. A. ; Bersani, M. / Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. In: AIP Conference Proceedings. 2009 ; Vol. 1173. pp. 45-49.
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Giubertoni, D, Pepponi, G, Beckhoff, B, Hoenicke, P, Gennaro, S, Meirer, F, Ingerle, D, Steinhauser, G, Fried, M, Petrik, P, Parisini, A, Reading, MA, Streli, C, Van Den Berg, JA & Bersani, M 2009, 'Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium', AIP Conference Proceedings, vol. 1173, pp. 45-49. https://doi.org/10.1063/1.3251258

Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. / Giubertoni, D.; Pepponi, G.; Beckhoff, B.; Hoenicke, P.; Gennaro, S.; Meirer, F.; Ingerle, D.; Steinhauser, G.; Fried, M.; Petrik, P.; Parisini, A.; Reading, M. A.; Streli, C.; Van Den Berg, J. A.; Bersani, M.

In: AIP Conference Proceedings, Vol. 1173, 14.10.2009, p. 45-49.

Research output: Contribution to journalArticle

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AU - Petrik, P.

AU - Parisini, A.

AU - Reading, M. A.

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AU - Van Den Berg, J. A.

AU - Bersani, M.

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