Multilayer growth by low energy ion beam deposition

We report our progress in the development of a relatively new deposition technique, that of direct low energy ion beam deposition. We describe this technique, which is based on ion implanter technology similar to that used in the semiconductor industry, where slow deposition rates, of order 0.005 nm/s, potentially allow for better control of the film properties as a function of depth. We present preliminary data from films grown on this system with deposition energies ranging from several tens of eV to several hundred eV with particular reference to the effect of deposition energy on morphology of Co based films and multilayers. We also explore possibilities for this technique which include ultra thin film growth and isotopic deposition.