Multilayer growth by low energy ion beam deposition

D. E. Joyce, N. D. Telling, J. A. Van Den Berg, D. G. Lord, P. J. Grundy

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We report our progress in the development of a relatively new deposition technique, that of direct low energy ion beam deposition. We describe this technique, which is based on ion implanter technology similar to that used in the semiconductor industry, where slow deposition rates, of order 0.005 nm/s, potentially allow for better control of the film properties as a function of depth. We present preliminary data from films grown on this system with deposition energies ranging from several tens of eV to several hundred eV with particular reference to the effect of deposition energy on morphology of Co based films and multilayers. We also explore possibilities for this technique which include ultra thin film growth and isotopic deposition.

LanguageEnglish
Pages731-733
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume198-199
DOIs
Publication statusPublished - 1 Jun 1999
Externally publishedYes
Event3rd International Symposium on Metallic Multilayers - Vancouver, Canada
Duration: 14 Jun 199819 Jun 1998
Conference number: 3

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Ion beams
Multilayers
ion beams
energy
Ultrathin films
Film growth
Deposition rates
Ions
Semiconductor materials
industries
thin films
Industry
ions

Cite this

Joyce, D. E. ; Telling, N. D. ; Van Den Berg, J. A. ; Lord, D. G. ; Grundy, P. J. / Multilayer growth by low energy ion beam deposition. In: Journal of Magnetism and Magnetic Materials. 1999 ; Vol. 198-199. pp. 731-733.
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Multilayer growth by low energy ion beam deposition. / Joyce, D. E.; Telling, N. D.; Van Den Berg, J. A.; Lord, D. G.; Grundy, P. J.

In: Journal of Magnetism and Magnetic Materials, Vol. 198-199, 01.06.1999, p. 731-733.

Research output: Contribution to journalConference article

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