n-Si/SiGe quantum cascade structures for THz emission

Z. Ikonic, I. Lazic, V. Milanovic, R. W. Kelsall, D. Indjin, P. Harrison

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


In this work we report on modeling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using the rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbour periods. The acoustic phonon, optical phonon, alloy and interface roughness scattering are taken in the model. The calculated U/I dependence and gain profiles are presented for a couple of QC structures.

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalJournal of Luminescence
Issue number2
Early online date25 Sep 2006
Publication statusPublished - 1 Dec 2006
Externally publishedYes
EventE-MRS 2006 Symposium D: Silicon-Based Photonics - Nice, France
Duration: 29 May 20062 Jun 2006


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