n-Si/SiGe quantum cascade structures for THz emission

Z. Ikonic; I. Lazic; V. Milanovic; R. W. Kelsall; D. Indjin; P. Harrison

doi:10.1016/j.jlumin.2006.08.049

n-Si/SiGe quantum cascade structures for THz emission

Z. Ikonic, I. Lazic, V. Milanovic, R. W. Kelsall, D. Indjin, P. Harrison

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

In this work we report on modeling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (X_z) and in-plane (X_xy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using the rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbour periods. The acoustic phonon, optical phonon, alloy and interface roughness scattering are taken in the model. The calculated U/I dependence and gain profiles are presented for a couple of QC structures.

Original language	English
Pages (from-to)	311-314
Number of pages	4
Journal	Journal of Luminescence
Volume	121
Issue number	2
Early online date	25 Sep 2006
DOIs	https://doi.org/10.1016/j.jlumin.2006.08.049
Publication status	Published - 1 Dec 2006
Externally published	Yes
Event	E-MRS 2006 Symposium D: Silicon-Based Photonics - Nice, France Duration: 29 May 2006 → 2 Jun 2006

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title = "n-Si/SiGe quantum cascade structures for THz emission",

abstract = "In this work we report on modeling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using the rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbour periods. The acoustic phonon, optical phonon, alloy and interface roughness scattering are taken in the model. The calculated U/I dependence and gain profiles are presented for a couple of QC structures.",

keywords = "Electron transport properties, Electronic structure, Natural frequencies, Phonons, Quantum theory, Scattering",

author = "Z. Ikonic and I. Lazic and V. Milanovic and Kelsall, {R. W.} and D. Indjin and P. Harrison",

year = "2006",

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doi = "10.1016/j.jlumin.2006.08.049",

language = "English",

volume = "121",

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journal = "Journal of Luminescence",

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publisher = "Elsevier",

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note = "E-MRS 2006 Symposium D : Silicon-Based Photonics ; Conference date: 29-05-2006 Through 02-06-2006",

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TY - JOUR

T1 - n-Si/SiGe quantum cascade structures for THz emission

AU - Ikonic, Z.

AU - Lazic, I.

AU - Milanovic, V.

AU - Kelsall, R. W.

AU - Indjin, D.

AU - Harrison, P.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In this work we report on modeling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using the rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbour periods. The acoustic phonon, optical phonon, alloy and interface roughness scattering are taken in the model. The calculated U/I dependence and gain profiles are presented for a couple of QC structures.

AB - In this work we report on modeling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using the rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbour periods. The acoustic phonon, optical phonon, alloy and interface roughness scattering are taken in the model. The calculated U/I dependence and gain profiles are presented for a couple of QC structures.

KW - Electron transport properties

KW - Electronic structure

KW - Natural frequencies

KW - Phonons

KW - Quantum theory

KW - Scattering

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DO - 10.1016/j.jlumin.2006.08.049

M3 - Conference article

AN - SCOPUS:33750307316

VL - 121

SP - 311

EP - 314

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

IS - 2

T2 - E-MRS 2006 Symposium D

Y2 - 29 May 2006 through 2 June 2006

ER -

n-Si/SiGe quantum cascade structures for THz emission

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