Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, G. Ben Assayag, N. Cherkashin, A. Claverie, J. A. Van Den Berg, V. Soncini, A. Agarwal, M. Ameen, M. Perego, M. Fanciulli

Research output: Contribution to journalConference article

52 Citations (Scopus)

Abstract

An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

Original languageEnglish
Pages (from-to)228-238
Number of pages11
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume216
Issue number1-4
DOIs
Publication statusPublished - Feb 2004
Externally publishedYes
EventThe European Materials Research Society Spring Meeting: 20th Anniversary - Palais de la Musique et des Congrès, Strasbourg, France
Duration: 10 Jun 200313 Jun 2003
Conference number: 20
http://www.ims.demokritos.gr/INVEST/emrs_2003_Spring_final.pdf (Link to Announcement and Call for Papers)

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Nanocrystals
Ion beams
nanocrystals
manufacturing
ion beams
Data storage equipment
Fabrication
fabrication
synthesis
low voltage
energy
Silica
silicon dioxide
Silicon
Electric potential
silicon

Cite this

Normand, P. ; Kapetanakis, E. ; Dimitrakis, P. ; Skarlatos, D. ; Beltsios, K. ; Tsoukalas, D. ; Bonafos, C. ; Ben Assayag, G. ; Cherkashin, N. ; Claverie, A. ; Van Den Berg, J. A. ; Soncini, V. ; Agarwal, A. ; Ameen, M. ; Perego, M. ; Fanciulli, M. / Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2004 ; Vol. 216, No. 1-4. pp. 228-238.
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keywords = "Ion beam synthesis, Nanocrystals, Non-volatile memory, Silicon implantation",
author = "P. Normand and E. Kapetanakis and P. Dimitrakis and D. Skarlatos and K. Beltsios and D. Tsoukalas and C. Bonafos and {Ben Assayag}, G. and N. Cherkashin and A. Claverie and {Van Den Berg}, {J. A.} and V. Soncini and A. Agarwal and M. Ameen and M. Perego and M. Fanciulli",
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Normand, P, Kapetanakis, E, Dimitrakis, P, Skarlatos, D, Beltsios, K, Tsoukalas, D, Bonafos, C, Ben Assayag, G, Cherkashin, N, Claverie, A, Van Den Berg, JA, Soncini, V, Agarwal, A, Ameen, M, Perego, M & Fanciulli, M 2004, 'Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 216, no. 1-4, pp. 228-238. https://doi.org/10.1016/j.nimb.2003.11.039

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications. / Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Van Den Berg, J. A.; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 216, No. 1-4, 02.2004, p. 228-238.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

AU - Normand, P.

AU - Kapetanakis, E.

AU - Dimitrakis, P.

AU - Skarlatos, D.

AU - Beltsios, K.

AU - Tsoukalas, D.

AU - Bonafos, C.

AU - Ben Assayag, G.

AU - Cherkashin, N.

AU - Claverie, A.

AU - Van Den Berg, J. A.

AU - Soncini, V.

AU - Agarwal, A.

AU - Ameen, M.

AU - Perego, M.

AU - Fanciulli, M.

PY - 2004/2

Y1 - 2004/2

N2 - An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

AB - An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

KW - Ion beam synthesis

KW - Nanocrystals

KW - Non-volatile memory

KW - Silicon implantation

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U2 - 10.1016/j.nimb.2003.11.039

DO - 10.1016/j.nimb.2003.11.039

M3 - Conference article

VL - 216

SP - 228

EP - 238

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -