An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.
|Number of pages||11|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - Feb 2004|
|Event||The European Materials Research Society Spring Meeting: 20th Anniversary - Palais de la Musique et des Congrès, Strasbourg, France|
Duration: 10 Jun 2003 → 13 Jun 2003
Conference number: 20
http://www.ims.demokritos.gr/INVEST/emrs_2003_Spring_final.pdf (Link to Announcement and Call for Papers)