Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, G. Ben Assayag, N. Cherkashin, A. Claverie, J. A. Van Den Berg, V. Soncini, A. Agarwal, M. Ameen, M. Perego, M. Fanciulli

Research output: Contribution to journalConference articlepeer-review

55 Citations (Scopus)


An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

Original languageEnglish
Pages (from-to)228-238
Number of pages11
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-4
Publication statusPublished - Feb 2004
Externally publishedYes
EventThe European Materials Research Society Spring Meeting: 20th Anniversary - Palais de la Musique et des Congrès, Strasbourg, France
Duration: 10 Jun 200313 Jun 2003
Conference number: 20 (Link to Announcement and Call for Papers)


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