Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

P. Normand; E. Kapetanakis; P. Dimitrakis; D. Skarlatos; K. Beltsios; D. Tsoukalas; C. Bonafos; G. Ben Assayag; N. Cherkashin; A. Claverie; J. A. Van Den Berg; V. Soncini; A. Agarwal; M. Ameen; M. Perego; M. Fanciulli

doi:10.1016/j.nimb.2003.11.039

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, G. Ben Assayag, N. Cherkashin, A. Claverie, J. A. Van Den Berg, V. Soncini, A. Agarwal, M. Ameen, M. Perego, M. Fanciulli

Research output: Contribution to journal › Conference article › peer-review

55 Citations (Scopus)

Abstract

An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

Original language	English
Pages (from-to)	228-238
Number of pages	11
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	216
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2003.11.039
Publication status	Published - Feb 2004
Externally published	Yes
Event	The European Materials Research Society Spring Meeting: 20th Anniversary - Palais de la Musique et des Congrès, Strasbourg, France Duration: 10 Jun 2003 → 13 Jun 2003 Conference number: 20 http://www.ims.demokritos.gr/INVEST/emrs_2003_Spring_final.pdf (Link to Announcement and Call for Papers)

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10.1016/j.nimb.2003.11.039

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Normand, P., Kapetanakis, E., Dimitrakis, P., Skarlatos, D., Beltsios, K., Tsoukalas, D., Bonafos, C., Ben Assayag, G., Cherkashin, N., Claverie, A., Van Den Berg, J. A., Soncini, V., Agarwal, A., Ameen, M., Perego, M., & Fanciulli, M. (2004). Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 216(1-4), 228-238. https://doi.org/10.1016/j.nimb.2003.11.039

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title = "Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications",

abstract = "An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.",

keywords = "Ion beam synthesis, Nanocrystals, Non-volatile memory, Silicon implantation",

author = "P. Normand and E. Kapetanakis and P. Dimitrakis and D. Skarlatos and K. Beltsios and D. Tsoukalas and C. Bonafos and \{Ben Assayag\}, G. and N. Cherkashin and A. Claverie and \{Van Den Berg\}, \{J. A.\} and V. Soncini and A. Agarwal and M. Ameen and M. Perego and M. Fanciulli",

year = "2004",

month = feb,

doi = "10.1016/j.nimb.2003.11.039",

language = "English",

volume = "216",

pages = "228--238",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier BV",

number = "1-4",

note = "The European Materials Research Society Spring Meeting : 20th Anniversary , E-MRS 2003 ; Conference date: 10-06-2003 Through 13-06-2003",

url = "http://www.ims.demokritos.gr/INVEST/emrs\_2003\_Spring\_final.pdf",

}

Normand, P, Kapetanakis, E, Dimitrakis, P, Skarlatos, D, Beltsios, K, Tsoukalas, D, Bonafos, C, Ben Assayag, G, Cherkashin, N, Claverie, A, Van Den Berg, JA, Soncini, V, Agarwal, A, Ameen, M, Perego, M & Fanciulli, M 2004, 'Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 216, no. 1-4, pp. 228-238. https://doi.org/10.1016/j.nimb.2003.11.039

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications. / Normand, P.; Kapetanakis, E.; Dimitrakis, P. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 216, No. 1-4, 02.2004, p. 228-238.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

AU - Normand, P.

AU - Kapetanakis, E.

AU - Dimitrakis, P.

AU - Skarlatos, D.

AU - Beltsios, K.

AU - Tsoukalas, D.

AU - Bonafos, C.

AU - Ben Assayag, G.

AU - Cherkashin, N.

AU - Claverie, A.

AU - Van Den Berg, J. A.

AU - Soncini, V.

AU - Agarwal, A.

AU - Ameen, M.

AU - Perego, M.

AU - Fanciulli, M.

N1 - Conference code: 20

PY - 2004/2

Y1 - 2004/2

N2 - An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

AB - An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

KW - Ion beam synthesis

KW - Nanocrystals

KW - Non-volatile memory

KW - Silicon implantation

UR - https://www.scopus.com/pages/publications/1042265822

UR - http://www.ims.demokritos.gr/INVEST/emrs_2003_Spring_final.pdf

U2 - 10.1016/j.nimb.2003.11.039

DO - 10.1016/j.nimb.2003.11.039

M3 - Conference article

AN - SCOPUS:1042265822

SN - 0168-583X

VL - 216

SP - 228

EP - 238

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - The European Materials Research Society Spring Meeting

Y2 - 10 June 2003 through 13 June 2003

ER -

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

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