Ne+ and Ar+ ion bombardment‐induced topography on Si

G. Carter, V. Vishnyakov

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The topographic evolution of Si irradiated at room temperature with Ne+ and Ar+ ions in the energy range 5–40 keV at 45° to the substrate normal has been studied. Other than isolated etch pits, no topography results from Ne+ bombardment at all energies and from Ar+ bombardment at 5 and 10 keV. Argon ion bombardment at 20 keV, however, initially produces transverse low‐amplitude waves that transform, with increasing erosion, into larger amplitude, corrugated and faceted, wave‐like structures. The present data do not conform to existing model predictions but do suggest that light low‐energy inert gas ions can be used to inhibit roughening during sputtering erosion.

LanguageEnglish
Pages514-520
Number of pages7
JournalSurface and Interface Analysis
Volume23
Issue number7-8
DOIs
Publication statusPublished - Jul 1995
Externally publishedYes

Fingerprint

Ion bombardment
Topography
bombardment
Erosion
topography
Ions
Noble Gases
erosion
Argon
Inert gases
Sputtering
ions
energy
rare gases
Substrates
sputtering
argon
room temperature
predictions
Temperature

Cite this

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Ne+ and Ar+ ion bombardment‐induced topography on Si. / Carter, G.; Vishnyakov, V.

In: Surface and Interface Analysis, Vol. 23, No. 7-8, 07.1995, p. 514-520.

Research output: Contribution to journalArticle

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