Observation of atomic processes in Xe nanocrystals embedded in A1 under 1 MeV electron irradiation

K. Mitsuishi, M. Song, K. Furuya, R. C. Birtcher, C. W. Allen, S. E. Donnelly

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Defect introduction processes in two differently sized Xe nanocrystals embedded in Al were observed with in situ high-resolution electron microscopy. The imaging conditions made it possible to follow the apparent movement of Xe atom columns within a nanocrystal. The positions of individual atom columns were measured on captured video images, before and after defect introduction, from intensity traces along the rows of atom columns. For each of these precipitates, a planar defect appears on {111}. The observed displacement of Xe atom columns approximately corresponds to the projected displacement produced by a Shockley partial dislocation, bounding an intrinsic stacking fault. Comparison of the displacements of atoms in the two nanocrystals shows that the displacements are reduced at the precipitate/matrix interfaces. This implies that there will be a displacement at interfaces that represents some compromise between the strain field of the partial dislocation and the interface compatibility requirement.

Original languageEnglish
Pages (from-to)184-188
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume148
Issue number1-4
DOIs
Publication statusPublished - 2 Jan 1999
Externally publishedYes

Fingerprint

Electron irradiation
electron irradiation
Nanocrystals
nanocrystals
Atoms
atoms
Defects
Precipitates
precipitates
defects
High resolution electron microscopy
Stacking faults
Dislocations (crystals)
crystal defects
compatibility
electron microscopy
Imaging techniques
requirements
high resolution
matrices

Cite this

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abstract = "Defect introduction processes in two differently sized Xe nanocrystals embedded in Al were observed with in situ high-resolution electron microscopy. The imaging conditions made it possible to follow the apparent movement of Xe atom columns within a nanocrystal. The positions of individual atom columns were measured on captured video images, before and after defect introduction, from intensity traces along the rows of atom columns. For each of these precipitates, a planar defect appears on {111}. The observed displacement of Xe atom columns approximately corresponds to the projected displacement produced by a Shockley partial dislocation, bounding an intrinsic stacking fault. Comparison of the displacements of atoms in the two nanocrystals shows that the displacements are reduced at the precipitate/matrix interfaces. This implies that there will be a displacement at interfaces that represents some compromise between the strain field of the partial dislocation and the interface compatibility requirement.",
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Observation of atomic processes in Xe nanocrystals embedded in A1 under 1 MeV electron irradiation. / Mitsuishi, K.; Song, M.; Furuya, K.; Birtcher, R. C.; Allen, C. W.; Donnelly, S. E.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 148, No. 1-4, 02.01.1999, p. 184-188.

Research output: Contribution to journalArticle

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AB - Defect introduction processes in two differently sized Xe nanocrystals embedded in Al were observed with in situ high-resolution electron microscopy. The imaging conditions made it possible to follow the apparent movement of Xe atom columns within a nanocrystal. The positions of individual atom columns were measured on captured video images, before and after defect introduction, from intensity traces along the rows of atom columns. For each of these precipitates, a planar defect appears on {111}. The observed displacement of Xe atom columns approximately corresponds to the projected displacement produced by a Shockley partial dislocation, bounding an intrinsic stacking fault. Comparison of the displacements of atoms in the two nanocrystals shows that the displacements are reduced at the precipitate/matrix interfaces. This implies that there will be a displacement at interfaces that represents some compromise between the strain field of the partial dislocation and the interface compatibility requirement.

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