Skip to main navigation
Skip to search
Skip to main content
University of Huddersfield Research Portal Home
Help & FAQ
Home
Profiles
Research units
Research output
Activities
Projects
Press/Media
Datasets
Student theses
Search by expertise, name or affiliation
Occupancy calculations for quantum-dot-based memory devices
M. Prada, P. Harrison
Research output
:
Contribution to journal
›
Article
›
peer-review
1
Citation (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Occupancy calculations for quantum-dot-based memory devices'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Occupancy
100%
Quantum Dots
100%
Memory Device
100%
Conductance
50%
Quantum Dot Arrays
33%
Information Storage
16%
Spatial Distribution
16%
Threshold Voltage
16%
Non-volatile Memory
16%
Array Structure
16%
Semiconductor Nanocrystals
16%
Charging-discharging
16%
Charging Process
16%
Eigenstates
16%
Gate Bias
16%
Narrow Channel
16%
Geometrical Distribution
16%
Exact Diagonalization
16%
MOS Devices
16%
Hubbard Hamiltonian
16%
Coulomb Staircase
16%
Engineering
Quantum Dot
100%
Spatial Distribution
12%
Eigenvector
12%
Charging Process
12%
Single Dot
12%
Nonvolatile Memory
12%
Narrow Channel
12%
Gate Bias
12%
Physics
Quantum Dot
100%
Conductance
37%
Spatial Distribution
12%
Threshold Voltage
12%
Material Science
Quantum Dot
100%