Abstract
The formation of domains in p Si/SiGe quantum cascade structures is considered, because this is one of mechanisms affecting the operation of quantum cascade lasers and other devics. Hole transport is described via scattering between quantized states belonging to neighbouring periods, caused by phonons, alloy disorder, and carrier-carrier interactions. The conditions for domain formation are found for examples of homogeneously and modulation doped cascades.
Original language | English |
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Pages (from-to) | 11-14 |
Number of pages | 4 |
Journal | Journal of Computational Electronics |
Volume | 4 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1 Apr 2005 |
Externally published | Yes |