Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells

B. Čechavičius, J. Kavaliauskas, G. Krivaite, D. Seliuta, E. Širmulis, J. Devenson, G. Valušis, B. Sherliker, M. P. Halsall, M. J. Steer, P. Harrison

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2 × 1010 up to 2.5 × 1012 cm-2, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.

Original languageEnglish
Pages (from-to)328-332
Number of pages5
JournalActa Physica Polonica A
Issue number2
Publication statusPublished - 1 Feb 2005
Externally publishedYes
Event12th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania
Duration: 22 Aug 200425 Aug 2004
Conference number: 12


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