Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells

B. Čechavičius; J. Kavaliauskas; G. Krivaite; D. Seliuta; E. Širmulis; J. Devenson; G. Valušis; B. Sherliker; M. P. Halsall; M. J. Steer; P. Harrison

doi:10.12693/APhysPolA.107.328

Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells

B. Čechavičius, J. Kavaliauskas, G. Krivaite, D. Seliuta, E. Širmulis, J. Devenson, G. Valušis, B. Sherliker, M. P. Halsall, M. J. Steer, P. Harrison

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2 × 10¹⁰ up to 2.5 × 10¹² cm^-2, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.

Original language	English
Pages (from-to)	328-332
Number of pages	5
Journal	Acta Physica Polonica A
Volume	107
Issue number	2
DOIs	https://doi.org/10.12693/APhysPolA.107.328
Publication status	Published - 1 Feb 2005
Externally published	Yes
Event	12th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania Duration: 22 Aug 2004 → 25 Aug 2004 Conference number: 12 http://przyrbwn.icm.edu.pl/APP/SPIS/a107-1.html

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title = "Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells",

abstract = "We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2 × 1010 up to 2.5 × 1012 cm-2, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.",

keywords = "Aluminum compounds, Beryllium, Electric fields, Impurities, Interfaces (materials), Matrix algebra, Oscillations, Photocurrents, Photoionization, Semiconducting gallium arsenide, Semiconductor doping",

author = "B. {\v C}echavi{\v c}ius and J. Kavaliauskas and G. Krivaite and D. Seliuta and E. {\v S}irmulis and J. Devenson and G. Valu{\v s}is and B. Sherliker and Halsall, {M. P.} and Steer, {M. J.} and P. Harrison",

year = "2005",

month = feb,

day = "1",

doi = "10.12693/APhysPolA.107.328",

language = "English",

volume = "107",

pages = "328--332",

journal = "Acta Physica Polonica A",

issn = "0587-4246",

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note = "12th International Symposium on Ultrafast Phenomena in Semiconductors, 12 UFPS ; Conference date: 22-08-2004 Through 25-08-2004",

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T1 - Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells

AU - Čechavičius, B.

AU - Kavaliauskas, J.

AU - Krivaite, G.

AU - Seliuta, D.

AU - Širmulis, E.

AU - Devenson, J.

AU - Valušis, G.

AU - Sherliker, B.

AU - Halsall, M. P.

AU - Steer, M. J.

AU - Harrison, P.

N1 - Conference code: 12

PY - 2005/2/1

Y1 - 2005/2/1

N2 - We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2 × 1010 up to 2.5 × 1012 cm-2, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.

AB - We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2 × 1010 up to 2.5 × 1012 cm-2, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.

KW - Aluminum compounds

KW - Beryllium

KW - Electric fields

KW - Impurities

KW - Interfaces (materials)

KW - Matrix algebra

KW - Oscillations

KW - Photocurrents

KW - Photoionization

KW - Semiconducting gallium arsenide

KW - Semiconductor doping

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U2 - 10.12693/APhysPolA.107.328

DO - 10.12693/APhysPolA.107.328

M3 - Conference article

AN - SCOPUS:20044369700

VL - 107

SP - 328

EP - 332

JO - Acta Physica Polonica A

JF - Acta Physica Polonica A

SN - 0587-4246

IS - 2

T2 - 12th International Symposium on Ultrafast Phenomena in Semiconductors

Y2 - 22 August 2004 through 25 August 2004

ER -

Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells

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