Optical cavities for Si/SiGe tetrahertz quantum cascade emitters

R. W. Kelsall, Z. Ikonic, P. Harrison, S. A. Lynch, P. Townsend, D. J. Paul, D. J. Norris, S. L. Liew, A. G. Cullis, X. Li, J. Zhang, M. Bain, H. S. Gamble

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


The use of buried tungsten silicide layers for confinement of terahertz optical modes is described. Silicon-on-silicide substrates are prepared using a bond and etch-back technique, and the successful growth of extremely long (600 period) strain-balanced p-Si/SiGe quantum cascade heterostructures on these substrates is demonstrated. THz electroluminescence is observed from these structures at low temperature, when the structure is biased so as to obtain interwell ('diagonal') transitions between heavy and light hole subbands. The emission shows a strong polarisation dependence, indicating the efficacy of the silicide layer in confining long wavelength TM modes.

Original languageEnglish
Pages (from-to)851-854
Number of pages4
JournalOptical Materials
Issue number5
Early online date8 Oct 2004
Publication statusPublished - 1 Feb 2005
Externally publishedYes
EventEuropean Materials Research Society 2004 Spring Meeting: Si-based Photonics: Towards True Monolithic Integration - Strasbourg, France
Duration: 25 May 200428 May 2004


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