Optically Pumped Intersublevel Midinfrared Lasers Based on InAs - GaAs Quantum Dots

Nenad Vukmirović, Zoran Ikonić, Vladimir D. Jovanović, Dragan Indjin, Paul Harrison

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


We propose an optically pumped lager based on intersublevel transitions in InAs-GaAs pyramidal self-assembled quantum dots. A theoretical rate equations model of the laser is given in order to predict the dependence of the gain on pumping flux and temperature. The energy levels and wave functions were calculated using the 8-band k · p method where the symmetry of the pyramid was exploited to reduce the computational complexity. Carrier dynamics in the laser were modeled by taking both electron-longitudinal optical phonon and electron-longitudinal acoustic phonon interactions into account. The proposed laser emits at 14.6 μn with a gain of g ≈ 570 cm-l at the pumping flux φ = 1024 cm-2 S-1 and a temperature of T = 77 K. By varying the size of the investigated dots, laser emission in the spectral range 13-21 μm is predicted. In comparison to optically pumped lasers based on quantum wells, an advantage of the proposed type of laser is a lower pumping flux, due to the longer carrier lifetime in quantum dots, and also that both surface and edge emission are possible. The appropriate waveguide and cavity designs are presented, and by comparing the calculated values of the gain with the estimated losses, lasing is predicted even at room temperature for all the quantum dots investigated.

Original languageEnglish
Article number1522585
Pages (from-to)1361-1368
Number of pages8
JournalIEEE Journal of Quantum Electronics
Issue number11
Early online date24 Oct 2005
Publication statusPublished - 1 Nov 2005
Externally publishedYes


Dive into the research topics of 'Optically Pumped Intersublevel Midinfrared Lasers Based on InAs - GaAs Quantum Dots'. Together they form a unique fingerprint.

Cite this