Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well

N. Vukmirović, V. D. Jovanović, D. Indjin, Z. Ikonić, P. Harrison, V. Milanović

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)

Abstract

A design for a GaN/AlGaN optically pumped terahertz laser emitting at 34 μm (ΔE~36 meV) is presented. This laser uses a simple three-level scheme where the depopulation of the lower laser level is achieved via resonant longitudinal-optical-phonon emission. The quasibound energies and associated wave functions are calculated with the intrinsic electric field induced by the piezoelectric and the spontaneous polarizations. The structures based on a double quantum well were simulated and the output characteristics extracted using a fully self-consistent rate equation model with all relevant scattering processes included. Both electron-longitudinal-optical phonon and electron-acoustic-phonon interactions were taken into account. The carrier distribution in subbands was assumed to be Fermi-Dirac-like, with electron temperature equal to the lattice temperature, but with different Fermi levels for each subband. A population inversion of 12% for a pumping flux Φ=1027 cm-2 s-1 at room temperature was calculated for the optimized structure. By comparing the calculated modal gain and estimated waveguide and mirror losses the feasibility of laser action up to room temperature is predicted.

Original languageEnglish
Article number103106
JournalJournal of Applied Physics
Volume97
Issue number10
Early online date9 May 2005
DOIs
Publication statusPublished - 15 May 2005
Externally publishedYes

Fingerprint

Dive into the research topics of 'Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well'. Together they form a unique fingerprint.

Cite this