Origin of the stokes shift in semiconductor quantum wells

W. E. Hagston; P. Harrison; T. Stirner

doi:10.1002/amo.860030114

Origin of the stokes shift in semiconductor quantum wells

W. E. Hagston, P. Harrison, T. Stirner

Research output: Contribution to journal › Article › peer-review

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Abstract

Excitonic energy levels have been calculated in CdTe quantum wells with Cd₁_−xMn_xTe barriers. It has been shown that the introduction of small‐scale (relative to the exciton Bohr radius) interface disorder, which either preserves or breaks the inversion symmetry, can produce appreciable Stokes shifts between optical absorption and emission and that the associated line‐widths can remain narrow. A criterion for the existence of high‐quality interfaces, based on optical spectra, is described.

Original language	English
Pages (from-to)	95-101
Number of pages	7
Journal	Advanced Materials for Optics and Electronics
Volume	3
Issue number	1-6
DOIs	https://doi.org/10.1002/amo.860030114
Publication status	Published - 1 Jan 1994
Externally published	Yes

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title = "Origin of the stokes shift in semiconductor quantum wells",

abstract = "Excitonic energy levels have been calculated in CdTe quantum wells with Cd1−xMnxTe barriers. It has been shown that the introduction of small‐scale (relative to the exciton Bohr radius) interface disorder, which either preserves or breaks the inversion symmetry, can produce appreciable Stokes shifts between optical absorption and emission and that the associated line‐widths can remain narrow. A criterion for the existence of high‐quality interfaces, based on optical spectra, is described.",

keywords = "Quantum wells, Stokes shift",

author = "Hagston, {W. E.} and P. Harrison and T. Stirner",

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AU - Harrison, P.

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AB - Excitonic energy levels have been calculated in CdTe quantum wells with Cd1−xMnxTe barriers. It has been shown that the introduction of small‐scale (relative to the exciton Bohr radius) interface disorder, which either preserves or breaks the inversion symmetry, can produce appreciable Stokes shifts between optical absorption and emission and that the associated line‐widths can remain narrow. A criterion for the existence of high‐quality interfaces, based on optical spectra, is described.

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KW - Stokes shift

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JF - Advanced Functional Materials

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Origin of the stokes shift in semiconductor quantum wells

Abstract

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