Origin of the stokes shift in semiconductor quantum wells

W. E. Hagston, P. Harrison, T. Stirner

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Excitonic energy levels have been calculated in CdTe quantum wells with Cd1−xMnxTe barriers. It has been shown that the introduction of small‐scale (relative to the exciton Bohr radius) interface disorder, which either preserves or breaks the inversion symmetry, can produce appreciable Stokes shifts between optical absorption and emission and that the associated line‐widths can remain narrow. A criterion for the existence of high‐quality interfaces, based on optical spectra, is described.

Original languageEnglish
Pages (from-to)95-101
Number of pages7
JournalAdvanced Materials for Optics and Electronics
Issue number1-6
Publication statusPublished - 1 Jan 1994
Externally publishedYes


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