Phonon sidebands in photoluminescence of beryllium δ-doped GaAs/AlAs multiple quantum wells

Jurgis Kundrotas, Aurimas Čerškus, Agne Johannessen, Steponas Ašmontas, Gintaras Valušis, Matthew P. Halsall, Paul Harrison

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present a study of phonon sidebands in the photoluminescence spectra of Be acceptor-doped GaAs/AlAs multiple quantum wells at liquid nitrogen temperature. Up to two phonon satellites with a separation close to the GaAs longitudinal optical phonon energy are observed in the sideband of the photoluminescence. A theoretical analysis of the satellite-related photoluminescence lineshapes and their energetic position and impurity induced spectra is presented. The results show that the phonon satellites can be attributed to free-electron-Be acceptor transitions involving longitudinal optical phonon of GaAs - the host material of the studied quantum wells.

Original languageEnglish
Title of host publicationAdvanced Optical Materials, Technologies, and Devices
EditorsSteponas Ašmontas, Jonas Gradauskas
PublisherSPIE
Number of pages7
Volume6596
ISBN (Print)0819467324, 9780819467324
DOIs
Publication statusPublished - 25 Jan 2007
Externally publishedYes
EventAdvanced Optical Materials, Technologies, and Devices - Vilnius, Lithuania
Duration: 27 Aug 200630 Aug 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume6596
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceAdvanced Optical Materials, Technologies, and Devices
Country/TerritoryLithuania
CityVilnius
Period27/08/0630/08/06

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