Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells

B. Čechavičius, J. Kavaliauskas, G. Krivaite, D. Seliuta, G. Valušis, M. P. Halsall, M. J. Steer, P. Harrison

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29 Citations (Scopus)


We present an optical study of beryllium δ -doped GaAsAlAs multiple quantum well (QW) structures designed for sensing terahertz (THz) radiation. Photoreflectance (PR), surface photovoltage (SPV), and wavelength-modulated differential surface photovoltage (DSPV) spectra were measured in the structures with QW widths ranging from 3 to 20 nm and doping densities from 2× 1010 to 5× 1012 cm-2 at room temperature. The PR spectra displayed Franz-Keldysh oscillations which enabled an estimation of the electric-field strength of ∼20 kVcm at the sample surface. By analyzing the SPV spectra we have determined that a buried interface rather than the sample surface mainly governs the SPV effect. The DSPV spectra revealed sharp features associated with excitonic interband transitions which energies were found to be in a good agreement with those calculated including the nonparabolicity of the energy bands. The dependence of the exciton linewidth broadening on the well width and the quantum index has shown that an average half monolayer well width fluctuations is mostly predominant broadening mechanism for QWs thinner than 10 nm. The line broadening in lightly doped QWs, thicker than 10 nm, was found to arise from thermal broadening with the contribution from Stark broadening due to random electric fields of the ionized impurities in the structures. We finally consider the possible influence of strong internal electric fields, QW imperfections, and doping level on the operation of THz sensors fabricated using the studied structures.

Original languageEnglish
Article number023508
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 15 Jul 2005
Externally publishedYes


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