Physical Characterization of the Metal/High-k Layer Interaction upon Annealing

T. Conard, A. Franquet, W. Vandervorst, M. Reading, J. A. Van Den Berg, S. Van Elshocht, T. Schram, C. Adelmann, S. De Gendt

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals, In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5at the TaN/HfO2interface.
LanguageEnglish
Pages433-442
Number of pages10
JournalECS Transactions
Volume16
Issue number5
DOIs
Publication statusPublished - 1 Dec 2008
Externally publishedYes

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Annealing
Metals
Metallic compounds
Secondary ion mass spectrometry
X ray photoelectron spectroscopy
Nitrogen
Silicon
Oxides
Hot Temperature

Cite this

Conard, T., Franquet, A., Vandervorst, W., Reading, M., Van Den Berg, J. A., Van Elshocht, S., ... De Gendt, S. (2008). Physical Characterization of the Metal/High-k Layer Interaction upon Annealing. ECS Transactions, 16(5), 433-442. https://doi.org/10.1149/1.2981624
Conard, T. ; Franquet, A. ; Vandervorst, W. ; Reading, M. ; Van Den Berg, J. A. ; Van Elshocht, S. ; Schram, T. ; Adelmann, C. ; De Gendt, S. / Physical Characterization of the Metal/High-k Layer Interaction upon Annealing. In: ECS Transactions. 2008 ; Vol. 16, No. 5. pp. 433-442.
@article{59df270db947492f9066d452a30f38b0,
title = "Physical Characterization of the Metal/High-k Layer Interaction upon Annealing",
abstract = "The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals, In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5at the TaN/HfO2interface.",
author = "T. Conard and A. Franquet and W. Vandervorst and M. Reading and {Van Den Berg}, {J. A.} and {Van Elshocht}, S. and T. Schram and C. Adelmann and {De Gendt}, S.",
year = "2008",
month = "12",
day = "1",
doi = "10.1149/1.2981624",
language = "English",
volume = "16",
pages = "433--442",
journal = "ECS Transactions",
issn = "1938-5862",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

Conard, T, Franquet, A, Vandervorst, W, Reading, M, Van Den Berg, JA, Van Elshocht, S, Schram, T, Adelmann, C & De Gendt, S 2008, 'Physical Characterization of the Metal/High-k Layer Interaction upon Annealing', ECS Transactions, vol. 16, no. 5, pp. 433-442. https://doi.org/10.1149/1.2981624

Physical Characterization of the Metal/High-k Layer Interaction upon Annealing. / Conard, T.; Franquet, A.; Vandervorst, W.; Reading, M.; Van Den Berg, J. A.; Van Elshocht, S.; Schram, T.; Adelmann, C.; De Gendt, S.

In: ECS Transactions, Vol. 16, No. 5, 01.12.2008, p. 433-442.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Physical Characterization of the Metal/High-k Layer Interaction upon Annealing

AU - Conard, T.

AU - Franquet, A.

AU - Vandervorst, W.

AU - Reading, M.

AU - Van Den Berg, J. A.

AU - Van Elshocht, S.

AU - Schram, T.

AU - Adelmann, C.

AU - De Gendt, S.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals, In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5at the TaN/HfO2interface.

AB - The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals, In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5at the TaN/HfO2interface.

UR - http://www.scopus.com/inward/record.url?scp=63149093135&partnerID=8YFLogxK

U2 - 10.1149/1.2981624

DO - 10.1149/1.2981624

M3 - Article

VL - 16

SP - 433

EP - 442

JO - ECS Transactions

T2 - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 5

ER -

Conard T, Franquet A, Vandervorst W, Reading M, Van Den Berg JA, Van Elshocht S et al. Physical Characterization of the Metal/High-k Layer Interaction upon Annealing. ECS Transactions. 2008 Dec 1;16(5):433-442. https://doi.org/10.1149/1.2981624