Physical Characterization of the Metal/High-k Layer Interaction upon Annealing

T. Conard, A. Franquet, W. Vandervorst, M. Reading, J. A. Van Den Berg, S. Van Elshocht, T. Schram, C. Adelmann, S. De Gendt

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Abstract

The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals, In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5at the TaN/HfO2interface.
Original languageEnglish
Pages (from-to)433-442
Number of pages10
JournalECS Transactions
Volume16
Issue number5
DOIs
Publication statusPublished - 1 Dec 2008
Externally publishedYes

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    Conard, T., Franquet, A., Vandervorst, W., Reading, M., Van Den Berg, J. A., Van Elshocht, S., Schram, T., Adelmann, C., & De Gendt, S. (2008). Physical Characterization of the Metal/High-k Layer Interaction upon Annealing. ECS Transactions, 16(5), 433-442. https://doi.org/10.1149/1.2981624