Physical Characterization of the Metal/High-k Layer Interaction upon Annealing

T. Conard, A. Franquet, W. Vandervorst, M. Reading, J. A. Van Den Berg, S. Van Elshocht, T. Schram, C. Adelmann, S. De Gendt

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The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals, In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5at the TaN/HfO2interface.
Original languageEnglish
Pages (from-to)433-442
Number of pages10
JournalECS Transactions
Issue number5
Publication statusPublished - 1 Dec 2008
Externally publishedYes


Cite this

Conard, T., Franquet, A., Vandervorst, W., Reading, M., Van Den Berg, J. A., Van Elshocht, S., ... De Gendt, S. (2008). Physical Characterization of the Metal/High-k Layer Interaction upon Annealing. ECS Transactions, 16(5), 433-442.