Physical Characterization of the Metal/High-k Layer Interaction upon Annealing

T. Conard; A. Franquet; W. Vandervorst; M. Reading; J. A. Van Den Berg; S. Van Elshocht; T. Schram; C. Adelmann; S. De Gendt

doi:10.1149/1.2981624

Physical Characterization of the Metal/High-k Layer Interaction upon Annealing

T. Conard, A. Franquet, W. Vandervorst, M. Reading, J. A. Van Den Berg, S. Van Elshocht, T. Schram, C. Adelmann, S. De Gendt

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3 Citations (Scopus)

Abstract

The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals, In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5at the TaN/HfO2interface.

Original language	English
Pages (from-to)	433-442
Number of pages	10
Journal	ECS Transactions
Volume	16
Issue number	5
DOIs	https://doi.org/10.1149/1.2981624
Publication status	Published - 1 Dec 2008
Externally published	Yes

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title = "Physical Characterization of the Metal/High-k Layer Interaction upon Annealing",

abstract = "The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals, In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5at the TaN/HfO2interface.",

author = "T. Conard and A. Franquet and W. Vandervorst and M. Reading and {Van Den Berg}, {J. A.} and {Van Elshocht}, S. and T. Schram and C. Adelmann and {De Gendt}, S.",

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doi = "10.1149/1.2981624",

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T1 - Physical Characterization of the Metal/High-k Layer Interaction upon Annealing

AU - Conard, T.

AU - Franquet, A.

AU - Vandervorst, W.

AU - Reading, M.

AU - Van Den Berg, J. A.

AU - Van Elshocht, S.

AU - Schram, T.

AU - Adelmann, C.

AU - De Gendt, S.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals, In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5at the TaN/HfO2interface.

AB - The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals, In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5at the TaN/HfO2interface.

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U2 - 10.1149/1.2981624

DO - 10.1149/1.2981624

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VL - 16

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JO - ECS Transactions

JF - ECS Transactions

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ER -

Physical Characterization of the Metal/High-k Layer Interaction upon Annealing

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