Abstract
We have investigated a solid-state design advanced (see Soref et al. in SPIE Proceedings, vol.3795, p.516, 1999) to achieve a terahertz-amplification-by-the-stimulated-emission-of-radiation (TASER). The original design was based on light-to heavy-hole intersubband transitions in SiGe/Si heterostructures. This work adapts the design to electron intersubband transitions in the more readily available GaAs/Ga1-xAlxAs material system. It is found that the electric-field induced anti-crossings of the states, derived from the first excited state with the ground states of a superlattice in the Stark-ladder regime, offers the possibility of a population inversion and gain at room temperature.
Original language | English |
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Article number | 892737 |
Pages (from-to) | 153-158 |
Number of pages | 6 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 37 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2001 |
Externally published | Yes |