Potential analysis in nanoturning of single crystal silicon using molecular dynamics

Ying Chun Liang, Zhi Guo Wang, Ming Jun Chen, Jia Xuan Chen, Zhen Tong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Molecular dynamics simulations of the single crystal silicon nanoscale cutting with a diamond tool in ductile mode are carried out to investigate the adhesion phenomenon. After relaxation the silicon atoms on the surface reconstruct to make the potential decrease. The silicon atoms close to the diamond tool have the lowest potential (<-5.5 eV) and form a stable structure with surface atoms on the tool surface.

Original languageEnglish
Title of host publicationAdvanced Materials
Pages3236-3239
Number of pages4
Volume239-242
DOIs
Publication statusPublished - 2011
Externally publishedYes
EventInternational Conference on Chemical Engineering and Advanced Materials - Changsha, China
Duration: 28 May 201130 May 2011

Publication series

NameAdvanced Materials Research
Volume239-242
ISSN (Print)1022-6680

Conference

ConferenceInternational Conference on Chemical Engineering and Advanced Materials
Abbreviated titleCEAM 2011
CountryChina
CityChangsha
Period28/05/1130/05/11

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  • Cite this

    Liang, Y. C., Wang, Z. G., Chen, M. J., Chen, J. X., & Tong, Z. (2011). Potential analysis in nanoturning of single crystal silicon using molecular dynamics. In Advanced Materials (Vol. 239-242, pp. 3236-3239). (Advanced Materials Research; Vol. 239-242). https://doi.org/10.4028/www.scientific.net/AMR.239-242.3236