Potential analysis in nanoturning of single crystal silicon using molecular dynamics

Ying Chun Liang, Zhi Guo Wang, Ming Jun Chen, Jia Xuan Chen, Zhen Tong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Molecular dynamics simulations of the single crystal silicon nanoscale cutting with a diamond tool in ductile mode are carried out to investigate the adhesion phenomenon. After relaxation the silicon atoms on the surface reconstruct to make the potential decrease. The silicon atoms close to the diamond tool have the lowest potential (<-5.5 eV) and form a stable structure with surface atoms on the tool surface.

Original languageEnglish
Title of host publicationAdvanced Materials
Pages3236-3239
Number of pages4
Volume239-242
DOIs
Publication statusPublished - 2011
Externally publishedYes
EventInternational Conference on Chemical Engineering and Advanced Materials - Changsha, China
Duration: 28 May 201130 May 2011

Publication series

NameAdvanced Materials Research
Volume239-242
ISSN (Print)1022-6680

Conference

ConferenceInternational Conference on Chemical Engineering and Advanced Materials
Abbreviated titleCEAM 2011
CountryChina
CityChangsha
Period28/05/1130/05/11

Fingerprint

Molecular dynamics
Single crystals
Silicon
Atoms
Diamonds
Adhesion
Computer simulation

Cite this

Liang, Y. C., Wang, Z. G., Chen, M. J., Chen, J. X., & Tong, Z. (2011). Potential analysis in nanoturning of single crystal silicon using molecular dynamics. In Advanced Materials (Vol. 239-242, pp. 3236-3239). (Advanced Materials Research; Vol. 239-242). https://doi.org/10.4028/www.scientific.net/AMR.239-242.3236
Liang, Ying Chun ; Wang, Zhi Guo ; Chen, Ming Jun ; Chen, Jia Xuan ; Tong, Zhen. / Potential analysis in nanoturning of single crystal silicon using molecular dynamics. Advanced Materials. Vol. 239-242 2011. pp. 3236-3239 (Advanced Materials Research).
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abstract = "Molecular dynamics simulations of the single crystal silicon nanoscale cutting with a diamond tool in ductile mode are carried out to investigate the adhesion phenomenon. After relaxation the silicon atoms on the surface reconstruct to make the potential decrease. The silicon atoms close to the diamond tool have the lowest potential (<-5.5 eV) and form a stable structure with surface atoms on the tool surface.",
keywords = "Molecular dynamics, Nanoscale cutting, Potential energy, Single crystal silicon",
author = "Liang, {Ying Chun} and Wang, {Zhi Guo} and Chen, {Ming Jun} and Chen, {Jia Xuan} and Zhen Tong",
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Liang, YC, Wang, ZG, Chen, MJ, Chen, JX & Tong, Z 2011, Potential analysis in nanoturning of single crystal silicon using molecular dynamics. in Advanced Materials. vol. 239-242, Advanced Materials Research, vol. 239-242, pp. 3236-3239, International Conference on Chemical Engineering and Advanced Materials, Changsha, China, 28/05/11. https://doi.org/10.4028/www.scientific.net/AMR.239-242.3236

Potential analysis in nanoturning of single crystal silicon using molecular dynamics. / Liang, Ying Chun; Wang, Zhi Guo; Chen, Ming Jun; Chen, Jia Xuan; Tong, Zhen.

Advanced Materials. Vol. 239-242 2011. p. 3236-3239 (Advanced Materials Research; Vol. 239-242).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Chen, Jia Xuan

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AB - Molecular dynamics simulations of the single crystal silicon nanoscale cutting with a diamond tool in ductile mode are carried out to investigate the adhesion phenomenon. After relaxation the silicon atoms on the surface reconstruct to make the potential decrease. The silicon atoms close to the diamond tool have the lowest potential (<-5.5 eV) and form a stable structure with surface atoms on the tool surface.

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KW - Nanoscale cutting

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Liang YC, Wang ZG, Chen MJ, Chen JX, Tong Z. Potential analysis in nanoturning of single crystal silicon using molecular dynamics. In Advanced Materials. Vol. 239-242. 2011. p. 3236-3239. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.239-242.3236