Precipitation of Antimony Implanted into Silicon

S. Koffel; P. Pichler; M. A. Reading; J. A. Van Den Berg; H. Kheyrandish; S. Hamm; W. Lerch; A. Pakfar; C. Tavernier

doi:10.1149/1.3697457

Precipitation of Antimony Implanted into Silicon

S. Koffel, P. Pichler, M. A. Reading, J. A. Van Den Berg, H. Kheyrandish, S. Hamm, W. Lerch, A. Pakfar, C. Tavernier

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Antimony was implanted into silicon, followed by a rapid thermal annealing step to recrystallize the substrate. Post-activation annealings were made at 800 and 900°C with increasing time, to study the deactivation of antimony using a combination of SIMS, MEIS and TEM analyses. It was found that the antimony profile does not broaden for moderate thermal budgets. However, during thermal treatments, antimony atoms continuously move towards the surface. There, they pile-up in non-substitutional positions and form precipitates. It was also confirmed that this phenomenon happens after solid phase epitaxy. Possible explanations are discussed.

Original language	English
Title of host publication	Solid State Topics (General) - 220th ECS Meeting
Editors	K. Sundaram, D. Misra, H. Iwai, J. Fenton
Publisher	The Electrochemical Society
Pages	9-17
Number of pages	9
Volume	41
Edition	34
ISBN (Electronic)	9781566779746
ISBN (Print)	9781607683339
DOIs	https://doi.org/10.1149/1.3697457
Publication status	Published - 1 Dec 2012
Externally published	Yes
Event	Solid State Topics General Session - 220th ECS Meeting - Boston, United States Duration: 9 Oct 2011 → 14 Oct 2011 Conference number: 220

Publication series

Name	ECS Transactions
Number	34
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Solid State Topics General Session - 220th ECS Meeting
Country/Territory	United States
City	Boston
Period	9/10/11 → 14/10/11

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10.1149/1.3697457Licence: Unspecified

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Koffel, S., Pichler, P., Reading, M. A., Van Den Berg, J. A., Kheyrandish, H., Hamm, S., Lerch, W., Pakfar, A., & Tavernier, C. (2012). Precipitation of Antimony Implanted into Silicon. In K. Sundaram, D. Misra, H. Iwai, & J. Fenton (Eds.), Solid State Topics (General) - 220th ECS Meeting (34 ed., Vol. 41, pp. 9-17). (ECS Transactions; Vol. 41, No. 34). The Electrochemical Society. https://doi.org/10.1149/1.3697457

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title = "Precipitation of Antimony Implanted into Silicon",

abstract = "Antimony was implanted into silicon, followed by a rapid thermal annealing step to recrystallize the substrate. Post-activation annealings were made at 800 and 900°C with increasing time, to study the deactivation of antimony using a combination of SIMS, MEIS and TEM analyses. It was found that the antimony profile does not broaden for moderate thermal budgets. However, during thermal treatments, antimony atoms continuously move towards the surface. There, they pile-up in non-substitutional positions and form precipitates. It was also confirmed that this phenomenon happens after solid phase epitaxy. Possible explanations are discussed.",

keywords = "Silicon, Ion implantation, Doping (additives)",

author = "S. Koffel and P. Pichler and Reading, {M. A.} and {Van Den Berg}, {J. A.} and H. Kheyrandish and S. Hamm and W. Lerch and A. Pakfar and C. Tavernier",

year = "2012",

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booktitle = "Solid State Topics (General) - 220th ECS Meeting",

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Koffel, S, Pichler, P, Reading, MA, Van Den Berg, JA, Kheyrandish, H, Hamm, S, Lerch, W, Pakfar, A & Tavernier, C 2012, Precipitation of Antimony Implanted into Silicon. in K Sundaram, D Misra, H Iwai & J Fenton (eds), Solid State Topics (General) - 220th ECS Meeting. 34 edn, vol. 41, ECS Transactions, no. 34, vol. 41, The Electrochemical Society, pp. 9-17, Solid State Topics General Session - 220th ECS Meeting, Boston, Massachusetts, United States, 9/10/11. https://doi.org/10.1149/1.3697457

Precipitation of Antimony Implanted into Silicon. / Koffel, S.; Pichler, P.; Reading, M. A. et al.

Solid State Topics (General) - 220th ECS Meeting. ed. / K. Sundaram; D. Misra; H. Iwai; J. Fenton. Vol. 41 34. ed. The Electrochemical Society, 2012. p. 9-17 (ECS Transactions; Vol. 41, No. 34).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Precipitation of Antimony Implanted into Silicon

AU - Koffel, S.

AU - Pichler, P.

AU - Reading, M. A.

AU - Van Den Berg, J. A.

AU - Kheyrandish, H.

AU - Hamm, S.

AU - Lerch, W.

AU - Pakfar, A.

AU - Tavernier, C.

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N2 - Antimony was implanted into silicon, followed by a rapid thermal annealing step to recrystallize the substrate. Post-activation annealings were made at 800 and 900°C with increasing time, to study the deactivation of antimony using a combination of SIMS, MEIS and TEM analyses. It was found that the antimony profile does not broaden for moderate thermal budgets. However, during thermal treatments, antimony atoms continuously move towards the surface. There, they pile-up in non-substitutional positions and form precipitates. It was also confirmed that this phenomenon happens after solid phase epitaxy. Possible explanations are discussed.

AB - Antimony was implanted into silicon, followed by a rapid thermal annealing step to recrystallize the substrate. Post-activation annealings were made at 800 and 900°C with increasing time, to study the deactivation of antimony using a combination of SIMS, MEIS and TEM analyses. It was found that the antimony profile does not broaden for moderate thermal budgets. However, during thermal treatments, antimony atoms continuously move towards the surface. There, they pile-up in non-substitutional positions and form precipitates. It was also confirmed that this phenomenon happens after solid phase epitaxy. Possible explanations are discussed.

KW - Silicon

KW - Ion implantation

KW - Doping (additives)

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ER -

Precipitation of Antimony Implanted into Silicon

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