Precipitation of Antimony Implanted into Silicon

S. Koffel, P. Pichler, M. A. Reading, J. A. Van Den Berg, H. Kheyrandish, S. Hamm, W. Lerch, A. Pakfar, C. Tavernier

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Antimony was implanted into silicon, followed by a rapid thermal annealing step to recrystallize the substrate. Post-activation annealings were made at 800 and 900°C with increasing time, to study the deactivation of antimony using a combination of SIMS, MEIS and TEM analyses. It was found that the antimony profile does not broaden for moderate thermal budgets. However, during thermal treatments, antimony atoms continuously move towards the surface. There, they pile-up in non-substitutional positions and form precipitates. It was also confirmed that this phenomenon happens after solid phase epitaxy. Possible explanations are discussed.

Original languageEnglish
Title of host publicationSolid State Topics (General) - 220th ECS Meeting
EditorsK. Sundaram, D. Misra, H. Iwai, J. Fenton
PublisherThe Electrochemical Society
Pages9-17
Number of pages9
Volume41
Edition34
ISBN (Electronic)9781566779746
ISBN (Print)9781607683339
DOIs
Publication statusPublished - 1 Dec 2012
Externally publishedYes
EventSolid State Topics General Session - 220th ECS Meeting - Boston, United States
Duration: 9 Oct 201114 Oct 2011
Conference number: 220

Publication series

NameECS Transactions
Number34
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSolid State Topics General Session - 220th ECS Meeting
CountryUnited States
CityBoston
Period9/10/1114/10/11

Fingerprint

Antimony
Silicon
Rapid thermal annealing
Secondary ion mass spectrometry
Epitaxial growth
Piles
Precipitates
Chemical activation
Heat treatment
Annealing
Transmission electron microscopy
Atoms
Substrates

Cite this

Koffel, S., Pichler, P., Reading, M. A., Van Den Berg, J. A., Kheyrandish, H., Hamm, S., ... Tavernier, C. (2012). Precipitation of Antimony Implanted into Silicon. In K. Sundaram, D. Misra, H. Iwai, & J. Fenton (Eds.), Solid State Topics (General) - 220th ECS Meeting (34 ed., Vol. 41, pp. 9-17). (ECS Transactions; Vol. 41, No. 34). The Electrochemical Society. https://doi.org/10.1149/1.3697457
Koffel, S. ; Pichler, P. ; Reading, M. A. ; Van Den Berg, J. A. ; Kheyrandish, H. ; Hamm, S. ; Lerch, W. ; Pakfar, A. ; Tavernier, C. / Precipitation of Antimony Implanted into Silicon. Solid State Topics (General) - 220th ECS Meeting. editor / K. Sundaram ; D. Misra ; H. Iwai ; J. Fenton. Vol. 41 34. ed. The Electrochemical Society, 2012. pp. 9-17 (ECS Transactions; 34).
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Koffel, S, Pichler, P, Reading, MA, Van Den Berg, JA, Kheyrandish, H, Hamm, S, Lerch, W, Pakfar, A & Tavernier, C 2012, Precipitation of Antimony Implanted into Silicon. in K Sundaram, D Misra, H Iwai & J Fenton (eds), Solid State Topics (General) - 220th ECS Meeting. 34 edn, vol. 41, ECS Transactions, no. 34, vol. 41, The Electrochemical Society, pp. 9-17, Solid State Topics General Session - 220th ECS Meeting, Boston, United States, 9/10/11. https://doi.org/10.1149/1.3697457

Precipitation of Antimony Implanted into Silicon. / Koffel, S.; Pichler, P.; Reading, M. A.; Van Den Berg, J. A.; Kheyrandish, H.; Hamm, S.; Lerch, W.; Pakfar, A.; Tavernier, C.

Solid State Topics (General) - 220th ECS Meeting. ed. / K. Sundaram; D. Misra; H. Iwai; J. Fenton. Vol. 41 34. ed. The Electrochemical Society, 2012. p. 9-17 (ECS Transactions; Vol. 41, No. 34).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Koffel S, Pichler P, Reading MA, Van Den Berg JA, Kheyrandish H, Hamm S et al. Precipitation of Antimony Implanted into Silicon. In Sundaram K, Misra D, Iwai H, Fenton J, editors, Solid State Topics (General) - 220th ECS Meeting. 34 ed. Vol. 41. The Electrochemical Society. 2012. p. 9-17. (ECS Transactions; 34). https://doi.org/10.1149/1.3697457