Precipitation of Antimony Implanted into Silicon

S. Koffel, P. Pichler, M. A. Reading, J. A. Van Den Berg, H. Kheyrandish, S. Hamm, W. Lerch, A. Pakfar, C. Tavernier

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)


Antimony was implanted into silicon, followed by a rapid thermal annealing step to recrystallize the substrate. Post-activation annealings were made at 800 and 900°C with increasing time, to study the deactivation of antimony using a combination of SIMS, MEIS and TEM analyses. It was found that the antimony profile does not broaden for moderate thermal budgets. However, during thermal treatments, antimony atoms continuously move towards the surface. There, they pile-up in non-substitutional positions and form precipitates. It was also confirmed that this phenomenon happens after solid phase epitaxy. Possible explanations are discussed.

Original languageEnglish
Title of host publicationSolid State Topics (General) - 220th ECS Meeting
EditorsK. Sundaram, D. Misra, H. Iwai, J. Fenton
PublisherThe Electrochemical Society
Number of pages9
ISBN (Electronic)9781566779746
ISBN (Print)9781607683339
Publication statusPublished - 1 Dec 2012
Externally publishedYes
EventSolid State Topics General Session - 220th ECS Meeting - Boston, United States
Duration: 9 Oct 201114 Oct 2011
Conference number: 220

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


ConferenceSolid State Topics General Session - 220th ECS Meeting
Country/TerritoryUnited States


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