Predictions of the responsivity of terahertz quantum well infrared photodetectors

M. A. Gadir; P. Harrison; R. A. Soref

doi:10.1117/12.480307

Predictions of the responsivity of terahertz quantum well infrared photodetectors

M. A. Gadir, P. Harrison, R. A. Soref

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This letter focuses on the first-principles model of the photocurrent in quantum well infrared photodetectors (QWIPs) derived in reference [1], The model explores the absorption coefficient measured experimentally. Then we move to show how the responsivity and quantum efficiency vary with α. The work in this paper shows that the device response indeed increases as QWIPs are designed and fabricated to detect longer wavelengths despite the fall in device performance as a result of the growing effect of the dark (noise) current.

Original language	English
Title of host publication	Integrated Optoelectronic Devices
Subtitle of host publication	Quantum Sensing: Evolution and Revolution from Past to Future
Editors	Manijeh Razeghi, Gail J. Brown
Publisher	SPIE
Pages	200-209
Number of pages	10
Volume	4999
DOIs	https://doi.org/10.1117/12.480307
Publication status	Published - 1 Jul 2003
Externally published	Yes
Event	Integrated Optoelectronics Devices: Quantum Sensing: Evolution and Revolution from Past to Future - San Jose, United States Duration: 25 Jan 2003 → 31 Jan 2003 https://www.spiedigitallibrary.org/conference-proceedings-of-spie/4999.toc

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	4999
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Integrated Optoelectronics Devices
Country/Territory	United States
City	San Jose
Period	25/01/03 → 31/01/03
Internet address	https://www.spiedigitallibrary.org/conference-proceedings-of-spie/4999.toc

Access to Document

10.1117/12.480307Licence: Unspecified

Cite this

Gadir, M. A., Harrison, P., & Soref, R. A. (2003). Predictions of the responsivity of terahertz quantum well infrared photodetectors. In M. Razeghi, & G. J. Brown (Eds.), Integrated Optoelectronic Devices: Quantum Sensing: Evolution and Revolution from Past to Future (Vol. 4999, pp. 200-209). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 4999). SPIE. https://doi.org/10.1117/12.480307

Gadir, M. A. ; Harrison, P. ; Soref, R. A. / Predictions of the responsivity of terahertz quantum well infrared photodetectors. Integrated Optoelectronic Devices: Quantum Sensing: Evolution and Revolution from Past to Future. editor / Manijeh Razeghi ; Gail J. Brown. Vol. 4999 SPIE, 2003. pp. 200-209 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{a454e27e0b754458811d166b5d99cc43,

title = "Predictions of the responsivity of terahertz quantum well infrared photodetectors",

abstract = "This letter focuses on the first-principles model of the photocurrent in quantum well infrared photodetectors (QWIPs) derived in reference [1], The model explores the absorption coefficient measured experimentally. Then we move to show how the responsivity and quantum efficiency vary with α. The work in this paper shows that the device response indeed increases as QWIPs are designed and fabricated to detect longer wavelengths despite the fall in device performance as a result of the growing effect of the dark (noise) current.",

keywords = "Capture probability, Detection wave-length, Photoconductive gain, Photocurrent, QWIP",

author = "Gadir, {M. A.} and P. Harrison and Soref, {R. A.}",

year = "2003",

month = jul,

day = "1",

doi = "10.1117/12.480307",

language = "English",

volume = "4999",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

pages = "200--209",

editor = "Manijeh Razeghi and Brown, {Gail J.}",

booktitle = "Integrated Optoelectronic Devices",

address = "United States",

note = "Integrated Optoelectronics Devices : Quantum Sensing: Evolution and Revolution from Past to Future ; Conference date: 25-01-2003 Through 31-01-2003",

url = "https://www.spiedigitallibrary.org/conference-proceedings-of-spie/4999.toc",

}

Gadir, MA, Harrison, P & Soref, RA 2003, Predictions of the responsivity of terahertz quantum well infrared photodetectors. in M Razeghi & GJ Brown (eds), Integrated Optoelectronic Devices: Quantum Sensing: Evolution and Revolution from Past to Future. vol. 4999, Proceedings of SPIE - The International Society for Optical Engineering, vol. 4999, SPIE, pp. 200-209, Integrated Optoelectronics Devices, San Jose, California, United States, 25/01/03. https://doi.org/10.1117/12.480307

Predictions of the responsivity of terahertz quantum well infrared photodetectors. / Gadir, M. A.; Harrison, P.; Soref, R. A.

Integrated Optoelectronic Devices: Quantum Sensing: Evolution and Revolution from Past to Future. ed. / Manijeh Razeghi; Gail J. Brown. Vol. 4999 SPIE, 2003. p. 200-209 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 4999).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Predictions of the responsivity of terahertz quantum well infrared photodetectors

AU - Gadir, M. A.

AU - Harrison, P.

AU - Soref, R. A.

PY - 2003/7/1

Y1 - 2003/7/1

N2 - This letter focuses on the first-principles model of the photocurrent in quantum well infrared photodetectors (QWIPs) derived in reference [1], The model explores the absorption coefficient measured experimentally. Then we move to show how the responsivity and quantum efficiency vary with α. The work in this paper shows that the device response indeed increases as QWIPs are designed and fabricated to detect longer wavelengths despite the fall in device performance as a result of the growing effect of the dark (noise) current.

AB - This letter focuses on the first-principles model of the photocurrent in quantum well infrared photodetectors (QWIPs) derived in reference [1], The model explores the absorption coefficient measured experimentally. Then we move to show how the responsivity and quantum efficiency vary with α. The work in this paper shows that the device response indeed increases as QWIPs are designed and fabricated to detect longer wavelengths despite the fall in device performance as a result of the growing effect of the dark (noise) current.

KW - Capture probability

KW - Detection wave-length

KW - Photoconductive gain

KW - Photocurrent

KW - QWIP

UR - http://www.scopus.com/inward/record.url?scp=0141455295&partnerID=8YFLogxK

U2 - 10.1117/12.480307

DO - 10.1117/12.480307

M3 - Conference contribution

AN - SCOPUS:0141455295

VL - 4999

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 200

EP - 209

BT - Integrated Optoelectronic Devices

A2 - Razeghi, Manijeh

A2 - Brown, Gail J.

PB - SPIE

T2 - Integrated Optoelectronics Devices

Y2 - 25 January 2003 through 31 January 2003

ER -

Gadir MA, Harrison P, Soref RA. Predictions of the responsivity of terahertz quantum well infrared photodetectors. In Razeghi M, Brown GJ, editors, Integrated Optoelectronic Devices: Quantum Sensing: Evolution and Revolution from Past to Future. Vol. 4999. SPIE. 2003. p. 200-209. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.480307

Predictions of the responsivity of terahertz quantum well infrared photodetectors

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this