Pseudopotential Study of Electronic and Optical Properties of InAs Semiconductor Nanostructures

Theerapong Puangmali, Marco Califano, Paul Harrison

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present an atomistic pseudopotential study of the electronic and optical properties of InAs quantum dots and nanorods as a function of increasing diameter and aspect ratio. As the aspect ratio increases, energy levels cross in both conduction and valence bands, reflecting their different dependence on confinement along a specific direction. Unlike in CdSe and InP quantum rods, however, the position of the crossover between highest occupied molecular orbitals with different symmetries is found to be size-dependent and the value of the aspect ratio at the crossing to increase with the rod diameter. The level crossings at the top of the valence band are crucial to explain the evolution with elongation of all optical properties in these systems. A common monotonic behaviour of band gap, Stokes shift, degree of linear polarization and radiative lifetime, is closely linked to the variation with aspect ratio of the electronic structure of the nanocrystal valence band edge.

Original languageEnglish
Title of host publication10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages63-64
Number of pages2
ISBN (Electronic)9781424470174
ISBN (Print)9781424470167
DOIs
Publication statusPublished - 7 Oct 2010
Externally publishedYes
Event10th International Conference on Numerical Simulation of Optoelectronic Devices - Atlanta, United States
Duration: 6 Sep 20109 Sep 2010
Conference number: 10

Publication series

NameInternational Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
PublisherIEEE
ISSN (Print)2158-3234
ISSN (Electronic)2158-3242

Conference

Conference10th International Conference on Numerical Simulation of Optoelectronic Devices
Abbreviated titleNUSOD 2010
Country/TerritoryUnited States
CityAtlanta
Period6/09/109/09/10

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